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BZM55C10

Description
Zener Diode, 10V V(Z), 6%, 0.5W, Silicon, Unidirectional, GLASS, LS-31, MICROMELF-2
CategoryDiscrete semiconductor    diode   
File Size455KB,5 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Environmental Compliance
Download Datasheet Parametric View All

BZM55C10 Overview

Zener Diode, 10V V(Z), 6%, 0.5W, Silicon, Unidirectional, GLASS, LS-31, MICROMELF-2

BZM55C10 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeMELF
package instructionO-LELF-R2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance15 Ω
JESD-30 codeO-LELF-R2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)265
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage10 V
surface mountYES
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance6%
Working test current5 mA
Base Number Matches1
BZM55C2V4
-BZM55C47
SURFACE MOUNT ZENER DIODE
VOLTAGE RANGE 2.4 to 47 Volts POWER RATING 500 mWatts
FEATURES
MECHANICAL DATA
* Case: MicroMELF
* Weight: approx. 12mg
.079 (2.00)
.071 (1.80)
.5
6)
.010 (0.25)
.006 (0.15)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
<.043 ( 1.10)
Dimensions in inches and (millimeters)
MAXIMUM RATINGES
( @ T
A
= 25 C unless otherwise noted )
RATINGS
Power Dissipation @R
qJA
<300 K/W
Terminal resistance (Mounted on epoxy-glass hard tissue,Fig.1)
Terminal resistance (35um copper clad,0.9mm2 copper area per electrode)
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
P
V
R
qJA
R
qJL
T
J
T
STG
VALUE
500
500
300
175
-65 to +175
UNITS
mW
K/W
K/W
o
o
o
<
.0
61
(1
.049 (1.25)
.047 (1.20)
* Saving space
* Hermetic sealed parts
* Electrical data identical with the devices BZT55 Series /
TZM Series
* Fits onto SOD323/SOD110footprints
* Very sharp reverse characteristic
* Very high stability
* Low noise
* Available with tighter tolerances
* Low reverse current level
* Lead (Pb)-free component
* Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Micro-MELF
C
C
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Forward Voltage at I
F=
200mA
SYMBOL
V
F
MIN.
-
TYP.
-
MAX.
1.5
UNITS
Volts
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