BYT42
Vishay
Semiconductors
1.6
1.4
1.2
1.0
0.8
0.6
BYT42M
0.4
0.2
0
0
96 12140
500
V
R
= V
R RM
f 1kHz
R
thJA
60K/W
l=10mm
v
v
P
R
– Reverse Power Dissipation ( mW )
I
FAV
– Average Forward Current ( A )
450
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
P
R
–Limit
@80%V
R
P
R
–Limit
@100%V
R
BYT42A
20
40
60
80 100 120 140 160 180
16306
T
amb
– Ambient Temperature (
°C
)
T
j
– Junction Temperature (
°C
)
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
1000
V
R
= V
RRM
C
D
– Diode Capacitance ( pF )
I
R
– Reverse Current (
m
A )
Figure 6. Max. Reverse Power Dissipation vs.
Junction Temperature
25
f=1MHz
20
15
10
5
0
0.1
16307
100
10
1
25
96 12141
50
75
100
125
150
175
1.0
10.0
100.0
T
j
– Junction Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 4. Max. Reverse Current vs. Junction Temperature
100.000
10.000
I
F
– Forward Current ( A )
T
j
= 175°C
1.000
T
j
= 25°C
0.100
0.010
0.001
0
96 12138
Figure 7. Diode Capacitance vs. Reverse Voltage
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
F
– Forward Voltage ( V )
Figure 5. Max. Forward Current vs. Forward Voltage
Document Number 86025
Rev. 4, 10-Aug-00
www.vishay.com
3 (5)
BYT42
Vishay
Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 86025
Rev. 4, 10-Aug-00
www.vishay.com
5 (5)
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