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597-4221-202

Description
Photo Transistor, 900nm, 0.015A I(C)
CategoryLED optoelectronic/LED    photoelectric   
File Size19KB,1 Pages
ManufacturerDIALIGHT
Websitehttps://www.dialight.com
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597-4221-202 Overview

Photo Transistor, 900nm, 0.015A I(C)

597-4221-202 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDIALIGHT
Reach Compliance Codeunknown
Coll-Emtr Bkdn Voltage-Min35 V
ConfigurationSINGLE
Maximum dark power200 nA
Infrared rangeYES
JESD-609 codee0
Nominal photocurrent0.016 mA
Installation featuresSURFACE MOUNT
Number of functions1
Maximum on-state current0.015 A
Maximum operating temperature100 °C
Minimum operating temperature-55 °C
Optoelectronic device typesPHOTO TRANSISTOR
peak wavelength900 nm
Maximum power dissipation0.165 W
shapeROUND
size2.39 mm
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
®
NEW
Surface Mount LED
IR Photo Transistor
1.91
[.075]
.806
[.032]
.806
[.032]
3.20
[.126]
3.40
[.134]
2.39
[.094]
3.51
[.138]
1.75
[.069]
Cathode Side
of SMD
1.50
[.059]
4.00
[.157]
Dialight
597-4221-2xx
PART NO.*
597-4221-2xx
8.00
[.315]
2.79 [.110]
2.21 [.087]
TAPING SPECIFICATIONS
(rear side of tape)
2.00
[.079]
4.00
[.157]
1.00 [.039]
*ORDERING INFORMATION
.806
[.032]
597-4221-2xx
packaging option
02
07
20 pieces on tape
7" reel, 2000 pcs/reel
.15
[.006]
.508
[.020]
CATHODE
I.D.
CATHODE
2.41 [.095]
RECOMMENDED
SOLDER PAD
LAYOUT
4.45
[.175]
1.14
[.045]
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C)
Operating and Storage
Temperature Range (°C)
Soldering Temperature
(≥2mm from case bottom)
Dip Soldering Time (T
S
) t≤5 s
Iron Soldering Time (T
S
) t≤3 s
Collector Emitter Voltage (V
CEO
)
Collector Current (I
C
)
Collector Peak Current (I
PK
) t<10µs
Power Dissipation (P
TOT
) T
A
=25°C
Thermal Resistence (R
THJA
)
260°C
300°C
35V
15 mA
75 mA
165 mW
450 k/W
Unit
nm
nm
mm
2
mm
Deg.
pF
nA
-55/+100
Dimensions in mm [inches]
1.65
[.065]
Benefits
Compatible with automatic placement equipment
Compatible with infrared reflow processes
Packaged on 8mm tape, 7" reels (meets EIA-481-1 standard)
Helps to eliminate mixed technology PC board processing
Compatible with Dialight's Optopipe
TM
Series light pipes
OPERATING CHARACTERISTICS
(T
A
=25°C)
Parameter
Maximum Sensitivity Wavelength
Spectral Range, Photosensitivity
Radiant Sensitive Area
Distance, Chip Surface and Lens
Full Angle
Capacitance
(V
CE
=0 V, f=1 MHz, E=0 lux)
Leakage Current (V
CE
=25 V, E=0 lx)
Photocurrent (Ee=0.5 mW/cm
2
,
V
CE
=5 V,
λ=950
nm)
Rise/Fall Time (I
C
=1 mA, V
CC
=5 V, R
L
=1kΩ)
Collector Emitter, Saturation Voltage
(I
C
=I
PCEmin
(1)
• 0.3,
λ=950
nm Ee=0.1 mW/cm2)
Notes: (1) IPCEmin = minimum photocurrent
Solder Adherance per MIL-STD-202E, Method 208C
Symbol
λ
Smax
λ
A
H
1
/
2
C
CE
I
ce0
Value
900
730 min, 1120 max
0.045 typ
2.4 typ, 2.8 max
120°
5
1 typ, 200 max
I
PCE
t
R
,t
F
V
CEsat
16 min, 32 typ
6.5 typ
150
µA
µs
mV
Dialight Corporation • 1913 Atlantic Avenue • Manasquan, NJ 08736 • TEL: (732) 223-9400 • FAX: (732) 223-8788 • www.dialight.com

597-4221-202 Related Products

597-4221-202 597-4221-207
Description Photo Transistor, 900nm, 0.015A I(C) Photo Transistor, 900nm, 0.015A I(C)
Is it Rohs certified? incompatible incompatible
Maker DIALIGHT DIALIGHT
Reach Compliance Code unknown unknown
Coll-Emtr Bkdn Voltage-Min 35 V 35 V
Configuration SINGLE SINGLE
Maximum dark power 200 nA 200 nA
Infrared range YES YES
JESD-609 code e0 e0
Nominal photocurrent 0.016 mA 0.016 mA
Installation features SURFACE MOUNT SURFACE MOUNT
Number of functions 1 1
Maximum on-state current 0.015 A 0.015 A
Maximum operating temperature 100 °C 100 °C
Minimum operating temperature -55 °C -55 °C
Optoelectronic device types PHOTO TRANSISTOR PHOTO TRANSISTOR
peak wavelength 900 nm 900 nm
Maximum power dissipation 0.165 W 0.165 W
shape ROUND ROUND
size 2.39 mm 2.39 mm
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 1 1

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