3SK230-U1A-A datasheet, PDF - EEWORLD Datasheet

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3SK230-U1A-A: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-61, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size66KB，8 Pages; ManufacturerNEC Electronics; Environmental Compliance

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3SK230-U1A-A Overview

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-61, 4 PIN

3SK230-U1A-A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NEC Electronics
Parts packaging code	SC-61
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	compliant
Other features	LOW NOISE
Configuration	SINGLE
Maximum drain current (ID)	0.025 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.03 pF
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
JESD-609 code	e6
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	16.5 dB
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN BISMUTH
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK230

RF AMP. FOR VHF/CATV TUNER

N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR

4 PINS MINI MOLD

FEATURES

The Characteristic of Cross-Modulation is good.

CM = 108 dB

(TYP.) @f = 470 MHz, G

30 dB

Low Noise Figure

High Power Gain

Enhancement Typ.

(1.8)

PACKAGE DIMENSIONS

(Unit: mm)

0.4

+0.1

–0.05

1.5

+0.2

–0.1

5°

0.4

+0.1

–0.05

0.16

+0.1

–0.06

5°

0 to 0.1

0.4

+0.1

–0.05

2.8

–0.3

+0.2

NF1 = 2.2 dB TYP. (@ = 470 MHz)

NF2 = 0.9 dB TYP. (@ = 55 MHz)

= 19.5 dB TYP. (@ = 470 MHz)

2.9±0.2

0.95

Automatically Mounting: Embossed Type Taping

Small Package: 4 Pins Mini Mold Package. (SC-61)

0.85

0.6

+0.1

–0.05

ABSOLUTE MAXIMUM RATINGS (T

= 25

Drain to Source Voltage

Gate1 to Source Voltage

Gate2 to Source Voltage

Gate1 to Drain Voltage

Gate2 to Drain Voltage

Drain Current

Total Power Dissipation

Channel Temperature

Storage Temperature

10 k

DSX

G1S

G2S

G1D

G2D

stg

±8(±10)*

200

125

0.8

1.1

+0.2

–3.1

55 to +125

PIN CONNECTIONS

1. Source

2. Drain

3. Gate 2

4. Gate 1

PRECAUTION:

Avoid high static voltages or electric fields so that this device would not suffer from any damage due

to those voltages or fields.

Document No. P10587EJ3V0DS00 (3rd edition)

Date Published November 1996 N

Printed in Japan

5°

(1.9)

Suitable for use as RF amplifier in CATV tuner.

1993

3SK230-U1A-A Related Products

	3SK230-U1A-A	3SK230-A	3SK230-U1B-A	3SK230	3SK230-U1B	3SK230-U1A
Description	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-61, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-61, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-61, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-61, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4
Is it Rohs certified?	conform to	conform to	conform to	incompatible	incompatible	incompatible
Maker	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics
Parts packaging code	SC-61	SC-61	SC-61	SC-61	SC-61	SC-61
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Contacts	4	4	4	4	4	4
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum drain current (ID)	0.025 A	0.025 A	0.025 A	0.025 A	0.025 A	0.025 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.03 pF	0.03 pF	0.03 pF	0.03 pF	0.03 pF	0.03 pF
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e6	e6	e6	e0	e0	e0
Number of components	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4
Operating mode	DUAL GATE, ENHANCEMENT MODE	DUAL GATE, ENHANCEMENT MODE	DUAL GATE, ENHANCEMENT MODE	DUAL GATE, ENHANCEMENT MODE	DUAL GATE, ENHANCEMENT MODE	DUAL GATE, ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Minimum power gain (Gp)	16.5 dB	16.5 dB	16.5 dB	16.5 dB	16.5 dB	16.5 dB
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal surface	TIN BISMUTH	TIN BISMUTH	TIN BISMUTH	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1

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