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DZ950N36K-A

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size159KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

DZ950N36K-A Overview

Rectifier Diode,

DZ950N36K-A Parametric

Parameter NameAttribute value
MakerInfineon
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.78 V
Maximum non-repetitive peak forward current35000 A
Number of components1
Maximum operating temperature150 °C
Maximum output current950 A
Maximum repetitive peak reverse voltage3600 V
Base Number Matches1
N
Netz-Dioden-Modul
Rectifier Diode Module
Datenblatt / Data sheet
DZ950N
DZ950N
Elektrische Eigenschaften / Electrical properties
Kenndaten
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltages
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Isolations-Prüfspannung
insulation test voltage
Elektrische Eigenschaften
T
Thermische Eigenschaften
vj
= -40°C... T
vj max
V
RRM
V
RSM
I
FRMSM
3600
4000 V
4400 V
4100 V
4500 V
1500 A
950 A
35.000 A
29.000 A
6.125.000 A²s
4.205.000 A²s
T
vj
= +25°C... T
vj max
3700
T
C
= 100
°C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
FAVM
I
FSM
I²t
T
vj
= T
vj max
, i
F
= 3000 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
, v
R
= V
RRM
RMS, f = 50 Hz, t = 1 sec
RMS, f = 50 Hz, t = 1 min
v
F
V
(TO)
r
T
i
R
V
ISOL
max.
1,78 V
0,85 V
0,28 mΩ
max.
100 mA
3,6 kV
3,0 kV
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Modul / per Module,
Θ
= 180° sin R
thJC
pro Modul / per Module, DC
max.
max.
0,042 °C/W
0,0405 °C/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
prepared by: C. Drilling
approved by: M. Leifeld
date of publication:
revision:
pro Modul / per Module
pro Zweig / per arm
R
thCH
T
vj max
T
c op
T
stg
max.
0,01 °C/W
160 °C
- 40...+150 °C
- 40...+150 °C
06.05.03
1
BIP AM / 00-09-28, K.-A. Rüther
A22/00
Seite/page
1/9
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