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MRF1518T1

Description
RF Power Field Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size752KB,20 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MRF1518T1 Overview

RF Power Field Effect Transistor

MRF1518T1 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionCHIP CARRIER, R-PQCC-N4
Contacts4
Manufacturer packaging codeCASE 466-02
Reach Compliance Codeunknow
Shell connectionISOLATED
ConfigurationSINGLE
Minimum drain-source breakdown voltage40 V
Maximum drain current (Abs) (ID)4 A
Maximum drain current (ID)4 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PQCC-N4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)62.5 W
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationQUAD
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Freescale Semiconductor
Technical Data
MRF1518
Rev. 6, 3/2005
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of this device
make it ideal for large- signal, common source amplifier applications in 12.5 volt
mobile FM equipment.
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 8 Watts
D
Power Gain — 11 dB
Efficiency — 55%
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal
Impedance Parameters
G
RF Power Plastic Surface Mount Package
Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
N Suffix Indicates Lead - Free Terminations
S
Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.
MRF1518NT1
MRF1518T1
520 MHz, 8 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C
(1)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
- 0.5, +40
±
20
4
62.5
0.50
- 65 to +150
150
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
2
Unit
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1. Calculated based on the formula P
D
=
TJ – TC
R
θJC
Rating
1
Package Peak Temperature
260
Unit
°C
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF1518NT1 MRF1518T1
1
RF Device Data
Freescale Semiconductor

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