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BYX108GT/R

Description
DIODE 0.34 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size47KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BYX108GT/R Overview

DIODE 0.34 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

BYX108GT/R Parametric

Parameter NameAttribute value
MakerNXP
package instructionE-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeE-LALF-W2
Number of components1
Number of terminals2
Maximum output current0.34 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage5000 V
Maximum reverse recovery time0.05 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D354
BYX105G; BYX106G; BYX107G;
BYX108G
High-voltage soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 Oct 03
2000 Jan 13

BYX108GT/R Related Products

BYX108GT/R BYX105G BYX105GT/R BYX106G BYX107G BYX108G BYX107GT/R
Description DIODE 0.34 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode DIODE 0.65 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode DIODE 0.65 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode 0.575A, 5000V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2 DIODE 0.48 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode DIODE 0.34 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode DIODE 0.48 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
Maker NXP NXP NXP NXP NXP NXP NXP
package instruction E-LALF-W2 HERMETIC SEALED, GLASS PACKAGE-2 E-LALF-W2 HERMETIC SEALED, GLASS PACKAGE-2 HERMETIC SEALED, GLASS PACKAGE-2 HERMETIC SEALED, GLASS PACKAGE-2 E-LALF-W2
Contacts 2 2 2 2 2 2 2
Reach Compliance Code unknown compliant unknown compliant compliant compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2
Number of components 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Maximum output current 0.34 A 0.65 A 0.65 A 0.575 A 0.48 A 0.34 A 0.48 A
Package body material GLASS GLASS GLASS GLASS GLASS GLASS GLASS
Package shape ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 5000 V 5000 V 5000 V 5000 V 5000 V 5000 V 5000 V
Maximum reverse recovery time 0.05 µs 0.6 µs 0.6 µs 0.35 µs 0.175 µs 0.05 µs 0.175 µs
surface mount NO NO NO NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Other features - LOW LEAKAGE CURRENT - LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT -
Maximum forward voltage (VF) - 9.3 V - 10.4 V 12 V 16.5 V -
Maximum non-repetitive peak forward current - 20 A - 15 A 14 A 14 A -
Maximum operating temperature - 175 °C - 175 °C 175 °C 175 °C -
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