FLM0910-25F
X, Ku-Band Internally Matched FET
FEATURES
・High
Output Power: P1dB=44dBm(Typ.)
・High
Gain: G1dB=7.0dB(Typ.)
・High
PAE:
η
add
=30%(Typ.)
・Broad
Band: 9.5½10.5GHz
・Impedance
Matched Zin/Zout = 50Ω
・Hermetically
Sealed Package
DESCRIPTION
The FLM0910-25F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
PTot
T
stg
T
ch
Rating
15
-5
93.7
-65 to +175
175
Unit
V
V
W
℃
℃
Recommended Operating Condition(Case Temperature Tc=25℃)
Item
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Symbol
V
DS
I
GF
I
GR
R
G
=25Ω
R
G
=25Ω
Condition
Limit
Unit
V
mA
mA
≤
10
≤
64
≥
-11.2
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃)
Item
Drain Current
Trans conductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Symbol
I
DSS
g
m
V
p
V
GSO
P
1dB
G
1dB
I
dsr
Test Conditions
V
DS
=5V , V
GS
=0V
V
DS
=5V , I
DS
=6.92A
V
DS
=5V , I
DS
=500mA
I
GS
=-500uA
V
DS
=10V
f=9.5 - 10.5 GHz
I
DS
=0.6Idss
Zs=Z
L
=50Ω
Min.
-
-
-0.5
-5.0
43
6.0
-
-
-
-
-
Limit
Typ.
10.8
10000
-1.5
-
44
7.0
6.5
30
-
1.4
-
Max.
16.2
-
-3.0
-
-
-
7.2
-
±0.6
1.6
100
Unit
A
mS
V
V
dBm
dB
A
%
dB
℃/W
℃
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
Thermal Resistance
Channel Temperature Rise
η
add
∆G
R
th
∆Tch
Channel to Case
10V X Idsr X Rth
CASE STYLE: IK
ESD
Class
Ⅲ
G.C.P.:Gain Compression Point , S.C.L.:Single Carrier Level
2000V ½
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.2
August 2003
1
FLM0910-25F
X, Ku-Band Internally Matched FET
For further information please contact :
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do
not put these products into the mouth.
・Do
not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe
government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
11th Floor, Hachioji Daiichi-Seimei Bldg.
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
Phone: +81-426-43-5885
FAX: +81-426-43-5582
FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
Phone: +852-23770226
FAX: +852-23763269
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
(© 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0202M200
5
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