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ASITPV385

Description
NPN SILICON RF POWER TRANSISTOR
File Size21KB,1 Pages
ManufacturerASI [ASI Semiconductor, Inc]
Download Datasheet View All

ASITPV385 Overview

NPN SILICON RF POWER TRANSISTOR

TPV385
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI
TPV385
is Designed for
Operation in Band III TV Transposers
and Transmitter Amplifiers from
170 to 230 MHz.
PACKAGE STYLE 500 6L FLG
FEATURES INCLUDE:
Gold Metalization
Emitter Ballast Resistors
Internal Input Matching
Common Emitter
MAXIMUM RATINGS
I
C
V
CB
V
CE
T
J
T
STG
θ
JC
10 A
(CONT)
65 V
35 V
-65 °C to +200 °C
-65 °C to +200 °C
1.5 °C/W
O
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CER
BV
CBO
BV
EBO
h
FE
C
ob
G
P
IMD
1
ψ
I
C
= 50 mA
I
C
= 50 mA
I
C
= 50 mA
I
E
= 10 mA
V
CE
= 5.0 V
V
CB
= 30 V
V
CE
= 28 V
V
CE
= 28 V
P
out
= 14 W
T
C
= 25 C
NONETEST
CONDITIONS
R
BE
= 10
MINIMUM TYPICAL MAXIMUM
35
60
65
4.0
UNITS
V
V
V
V
I
C
= 1.0 A
f = 1.0 MHz
P
out
= 14 W
ALL PHASEANGLES
LOAD
VSWR =
∝:1
20
65
14
15
100
85
---
pF
dB
f = 225 MHz
f = 225 MHz
-53
NO DEGRADATION IN OUTPUT POWER
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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