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IRFF122R

Description
5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
CategoryDiscrete semiconductor    The transistor   
File Size175KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

IRFF122R Overview

5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

IRFF122R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)36 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)5 A
Maximum drain current (ID)5 A
Maximum drain-source on-resistance0.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-205AF
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment20 W
Maximum power dissipation(Abs)20 W
Maximum pulsed drain current (IDM)20 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)170 ns
Maximum opening time (tons)110 ns
Base Number Matches1

IRFF122R Related Products

IRFF122R IRFF120R IRFF123R IRFF121R
Description 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF 6A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF 5A, 80V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF 6A, 80V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 36 mJ 36 mJ 36 mJ 36 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V 80 V 80 V
Maximum drain current (Abs) (ID) 5 A 6 A 5 A 6 A
Maximum drain current (ID) 5 A 6 A 5 A 6 A
Maximum drain-source on-resistance 0.4 Ω 0.3 Ω 0.4 Ω 0.3 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-205AF TO-205AF TO-205AF TO-205AF
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 20 W 20 W 20 W 20 W
Maximum power dissipation(Abs) 20 W 20 W 20 W 20 W
Maximum pulsed drain current (IDM) 20 A 24 A 20 A 24 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Maximum off time (toff) 170 ns 170 ns 170 ns 170 ns
Maximum opening time (tons) 110 ns 110 ns 110 ns 110 ns
Base Number Matches 1 1 1 -
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