BA1L4L-A datasheet, PDF - EEWORLD Datasheet

BA1L4L-A: DescriptionBA1L4L-A; CategoryDiscrete semiconductor The transistor; File Size129KB，2 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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BA1L4L-A Overview

BA1L4L-A

Parameter Name	Attribute value
Brand Name	Renesas
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	90
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	5000 ns
Maximum opening time (tons)	1000 ns
Base Number Matches	1

	BA1L4L-A
Description	BA1L4L-A
Brand Name	Renesas
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	90
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	5000 ns
Maximum opening time (tons)	1000 ns
Base Number Matches	1

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