SFT1443-H datasheet, PDF - EEWORLD Datasheet

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SFT1443-H: DescriptionSmall Signal Field-Effect Transistor; CategoryDiscrete semiconductor The transistor; File Size520KB，9 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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SFT1443-H Overview

Small Signal Field-Effect Transistor

SFT1443-H Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
Base Number Matches	1

SFT1443-H Preview

Ordering number : ENA1896A

SFT1443

SANYO Semiconductors

DATA SHEET

SFT1443

Features

•

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

•

ON-resistance RDS(on)1=180m

(typ.)

Halogen free compliance

Input Capacitance Ciss=490pF(typ.)

Protection diode in

•

4V drive

Speciﬁcations

Absolute Maximum Ratings

at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

IDP

Tch

Tstg

PW≤10μs, duty cycle≤1%

Tc=25°C

Conditions

Ratings

100

±20

150

-55 to +150

Unit

°C

Package Dimensions

unit : mm (typ)

7518-004

6.5

5.0

1.5

2.3

0.5

Package Dimensions

unit : mm (typ)

7003-004

SFT1443-H

6.5

5.0

2.3

1.5

0.5

SFT1443-TL-H

7.0

5.5

0.8

1.6

7.5

0.5

0.6

0.8

1.2

0 t o 0.2

1.2

0.6

2.5

0.85

0.7

5.5

7.0

0.85

0.5

1.2

1 : Gate

2 : Drain

3 : Source

4 : Drain

SANYO : TP

2.3

1 : Gate

2 : Drain

3 : Source

4 : Drain

SANYO : TP-FA

2.3

Product & Package Information

• Package : TP

• JEITA, JEDEC : SC-64, TO-251

• Minimum Packing Quantity : 500 pcs./bag

• Package : TP-FA

• JEITA, JEDEC : SC-63, TO-252

• Minimum Packing Quantity : 700 pcs./reel

2,4

Marking

(TP, TP-FA)

Packing Type (TP-FA) : TL

T1443

LOT No.

Electrical Connection

http://semicon.sanyo.com/en/network

60612 TKIM/D1510PA TKIM TC-00002450 No.A1896-1/9

SFT1443

Electrical Characteristics

at Ta=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)

yfs

RDS(on)1

RDS(on)2

RDS(on)3

Ciss

Coss

Crss

td(on)

td(off)

Qgs

Qgd

VSD

IS=9A, VGS=0V

VDS=50V, VGS=10V, ID=9A

See speciﬁed Test Circuit.

VDS=20V, f=1MHz

Conditions

ID=1mA, VGS=0V

VDS=100V, VGS=0V

VGS=±16V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=4.5A

ID=3A, VGS=10V

ID=1.5A, VGS=4.5V

ID=1.5A, VGS=4V

Ratings

min

100

±10

1.5

180

195

205

490

9.8

1.8

1.6

1.03

1.2

225

275

290

2.6

typ

max

Unit

μA

mΩ

Switching Time Test Circuit

VIN

VDD=50V

10V

VIN

PW=10μs

D.C.≤1%

ID=4.5A

RL=11.1Ω

VOUT

P.G

SFT1443

50Ω

Ordering Information

Device

SFT1443-H

SFT1443-TL-H

Package

TP-FA

Shipping

500pcs./bag

700pcs./reel

memo

Pb Free and Halogen Free

No. A1896-2/9

SFT1443

ID -- VDS

Tc=-25

8.0

ID -- VGS

VDS=10V

4.5

6.0

4.0V

Drain Current, ID -- A

3.5V

VGS=2.5V

0.5

1.0

1.5

2.0

2.5

3.0

IT16177

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Tc=

3.0V

--25

4.0

4.5

Drain-to-Source Voltage, VDS -- V

450

RDS(on) -- VGS

Gate-to-Source Voltage, VGS -- V

450

RDS(on) -- Tc

IT16178

Tc=25

ID=1.5A

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

400

350

400

350

300

250

200

150

100

--60

--40

--20

100

120

140

160

3.0A

300

250

200

150

100

3.0

I D=

.0V

=10

V GS

, ID

.5A

, ID

.5V

Gate-to-Source Voltage, VGS -- V

100

1.0

0.1

1.0

-- ID

IT16179

Case Temperature, Tc --

IT16180

IS -- VSD

Forward Transfer Admittance,

-- S

VDS=10V

VGS=0V

0.01

0.2

0.4

0.6

0.8

1.0

1.2

IT16182

Drain Current, ID -- A

100

IT16181

1000

0.001

SW Time -- ID

td(off)

Ciss, Coss, Crss -- VDS

Ciss

Diode Forward Voltage, VSD -- V

Switching Time, SW Time -- ns

VDD=50V

VGS=10V

Ciss, Coss, Crss -- pF

Tc=7

--25

Tc= --2

Source Current, IS -- A

1.0

0.1

f=1MHz

1.0

0.1

td(on)

100

Coss

Crss

5 7 1.0

5 7 10

Drain Current, ID -- A

5 7 100

IT16183

IT16184

Drain-to-Source Voltage, VDS -- V

No.A1896-3/9

SFT1443

VGS -- Qg

VDS=50V

ID=9A

Drain Current, ID -- A

Gate-to-Source Voltage, VGS -- V

100

1.0

0.1

ASO

IDP=36A (PW≤10μs)

ID=9A

per

atio

Operation in

this area is

limited by RDS(on).

0.01

0.1

Tc=25°C

Single pulse

5 7 1.0

5 7 10

Total Gate Charge, Qg -- nC

1.2

PD -- Ta

IT16185

Drain-to-Source Voltage, VDS -- V

PD -- Tc

5 7 100

IT16186

Allowable Power Dissipation, PD -- W

1.0

Allowable Power Dissipation, PD -- W

100

120

140

160

0.8

0.6

0.4

0.2

100

120

140

160

Ambient Temperature, Ta --

°C

IT16187

Case Temperature, Tc --

°C

IT16188

No. A1896-4/9

SFT1443

Taping Speciﬁcation

SFT1443-TL-H

No.A1896-5/9

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SFT1443-H Related Products

	SFT1443-H	SFT1443-TL-H
Description	Small Signal Field-Effect Transistor	Small Signal Field-Effect Transistor
Reach Compliance Code	unknown	unknown
Base Number Matches	1	1

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