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TPC8105-H

Description
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
CategoryDiscrete semiconductor    The transistor   
File Size467KB,7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

TPC8105-H Overview

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)

TPC8105-H Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction2-6J1B, 8 PIN
Contacts8
Reach Compliance Codeunknow
Is SamacsysN
Other featuresFAST SWITCHING
Avalanche Energy Efficiency Rating (Eas)63.7 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)7 A
Maximum drain current (ID)7 A
Maximum drain-source on-resistance0.06 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee0
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)2.4 W
Maximum pulsed drain current (IDM)28 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
TPC8105-H
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TPC8105−H
High Speed and High Efficiency DC−DC Converters
Lithium Ion Battery Applications
Notebook PCs
Portable Equipment Applications
Small footprint due to small and thin package
High speed switching
Small gate charge
: Qg = 32 nC (typ.)
: R
DS (ON)
= 20 mΩ (typ.)
Low drain−source ON resistance
Unit: mm
High forward transfer admittance : |Y
fs
| =
12
S (typ.)
Low leakage current : I
DSS
=
−10
µA (max) (V
DS
=
−30
V)
Enhancement−mode : V
th
=
−0.8~−2.0
V (V
DS
=
−10
V, I
D
=
−1
mA)
Maximum Ratings
(Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
= 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
(t = 10 s)
(Note 2a)
(t = 10 s)
(Note 2b)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
−30
−30
±20
−7
−28
2.4
1.0
63.7
−7
0.24
150
−55
to 150
Unit
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-6J1B
Drain power dissipation
Drain power dissipation
Weight: 0.080 g (typ.)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
Circuit Configuration
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
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