3.3V CMOS OCTAL
BUFFER/LINE DRIVER
Integrated Device Technology, Inc.
IDT54/74FCT3244/A
FEATURES:
• 0.5 MICRON CMOS Technology
• ESD > 2000V per MIL-STD-883, Method 3015;
> 200V using machine model (C = 200pF, R = 0)
• 25 mil Center SSOP and QSOP Packages
• Extended commercial range of -40°C to +85°C
• V
CC
= 3.3V
±0.3V,
Normal Range or
V
CC
= 2.7V to 3.6V, Extended Range
• CMOS power levels (0.4µW typ. static)
• Rail-to-Rail output swing for increased noise margin
• Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The FCT3244/A octal buffer/line drivers are built using
advanced dual metal CMOS technology. These high-speed,
low-power buffers are designed to be used as memory data
and address drivers, clock drivers, and bus-oriented transmit-
ter/receivers. The three-state controls are designed to oper-
ate these devices in a dual-nibble or single-byte mode. All
inputs are designed with hysteresis for improved noise mar-
gin.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATIONS
1
OE
1
2
3
4
5
6
7
8
9
10
P20-1
D20-1
SO20-2
SO20-7
&
SO20-8
20
19
18
17
16
15
14
13
12
11
Vcc
2
OE
1
Y
1
2
A
4
1
Y
2
2
A
3
1
Y
3
2
A
2
1
Y
4
2
A
1
1
OE
1
A
1
1
A
2
1
A
3
1
A
4
1
Y
1
1
Y
2
1
Y
3
1
Y
4
1
A
1
2
Y
4
1
A
2
2
Y
3
1
A
3
2
Y
2
1
A
4
2
Y
1
GND
2
OE
2
A
1
2
A
2
2
A
3
2
A
4
2
Y
1
2
Y
2
2
Y
3
2
Y
4
2779 drw 01
DIP/SOIC/SSOP/QSOP
TOP VIEW
2779 drw 02
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1996
Integrated Device Technology, Inc.
DECEMBER 1995
DSC-2779/4
8.11
1
IDT54/74FCT3244/A
3.3V CMOS OCTAL BUFFER/LINE DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN DESCRIPTION
Pin Names
x
OE
xAx
xYx
Description
3–State Output Enable Inputs (Active LOW)
Data Inputs
3-State Outputs
2779 tbl 01
FUNCTION TABLE
(1)
Inputs
x
OE
L
L
H
NOTE:
1. H = HIGH Voltage Level
X = Don’t Care
L = LOW Voltage Level
Z = High Impedance
xAx
L
H
X
Outputs
xYx
L
H
Z
2779 tbl 02
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
Commercial
Military
V
TERM(2)
Terminal Voltage
–0.5 to +4.6 –0.5 to +4.6
with Respect to
GND
(3)
Terminal Voltage
V
TERM
–0.5 to +7.0 –0.5 to +7.0
with Respect to
GND
–0.5 to
V
TERM(4)
Terminal Voltage
–0.5 to
with Respect to
V
CC
+ 0.5
V
CC
+ 0.5
GND
T
A
Operating
–40 to +85 –55 to +125
Temperature
T
BIAS
Temperature
–55 to +125 –65 to +135
Under Bias
T
STG
Storage
–55 to +125 –65 to +150
Temperature
P
T
Power Dissipation
1.0
1.0
I
OUT
DC Output
Current
–60 to +60
–60 to +60
Unit
V
CAPACITANCE
(T
A
= +25°C, f = 1.0MHz)
Symbol
Parameter
(1)
C
IN
Input
Capacitance
C
OUT
Output
Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ.
3.5
4.0
Max. Unit
6.0
pF
8.0
pF
V
NOTE:
1. This parameter is measured at characterization but not tested.
2779 lnk 04
V
°C
°C
°C
W
mA
2779 lnk 03
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for ex-
tended periods may affect reliability.
2. Vcc terminals.
3. Input terminals.
4. Output and I/O terminals.
8.11
2
IDT54/74FCT3244/A
3.3V CMOS OCTAL BUFFER/LINE DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Commercial: T
A
= –40°C to +85°C, V
CC
= 2.7V to 3.6V; Military: T
A
= –55°C to +125°C, V
CC
= 2.7V to 3.6V
Symbol
V
IH
V
IL
I
I H
I
I L
I
OZH
I
OZL
V
IK
I
ODH
I
ODL
V
OH
Parameter
Input HIGH Level (Input pins)
Input HIGH Level (I/O pins)
Input LOW Level
(Input and I/O pins)
Input HIGH Current (Input pins)
(6)
Input HIGH Current (I/O pins)
(6)
Input LOW Current (Input pins)
(6)
Input LOW Current (I/O pins)
(6)
High Impedance Output Current
(3-State Output pins)
(6)
Clamp Diode Voltage
Output HIGH Current
Output LOW Current
Output HIGH Voltage
V
CC
= Max.
V
CC
= Max.
V
I
= 5.5V
V
I
= V
CC
V
I
= GND
V
I
= GND
V
O
= V
CC
V
O
= GND
V
CC
= Min., I
IN
= –18mA
V
CC
= 3.3V, V
IN
= V
IH
or V
IL,
V
O
= 1.5V
(3)
V
CC
= 3.3V, V
IN
= V
IH
or V
IL,
V
O
= 1.5V
(3)
V
CC
= Min.
V
IN
= V
IH
or V
IL
V
CC
= 3.0V
V
IN
= V
IH
or V
IL
V
CC
= Min.
V
IN
= V
IH
or V
IL
I
OH
= –0.1mA
I
OH
= –3mA
I
OH
= –6mA MIL.
I
OH
= –8mA COM'L.
I
OL
= 0.1mA
I
OL
= 16mA
I
OL
= 24mA
V
CC
= 3.0V
I
OL
= 24mA
V
IN
= V
IH
or V
IL
V
CC
= Max., V
O
= GND
(3)
—
Test Conditions
(1)
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
Min.
2.0
2.0
–0.5
—
—
—
—
—
—
—
–36
50
V
CC
–
0.2
2.4
2.4
(5)
—
—
—
—
–60
—
—
—
Typ.
(2)
—
—
—
Max.
5.5
V
CC
+0.5
0.8
±1
±1
±1
±1
±1
±1
–
1.2
Unit
V
V
µA
—
—
—
—
—
—
–
0.7
µA
V
mA
mA
V
–60
90
—
3.0
3.0
—
0.2
0.3
0.3
–
135
–110
200
—
—
—
0.2
0.4
0.55
0.50
–240
—
V
OL
Output LOW Voltage
V
I
OS
V
H
I
CCL
I
CCH
I
CCZ
Short Circuit Current
(4)
Input Hysteresis
Quiescent Power Supply Current
mA
mV
µA
150
0.1
0.1
V
CC
= Max.,
V
IN
= GND or V
CC
COM'L.
MIL.
10
100
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 3.3V, +25°C ambient.
3. Not more than one output should be tested at one time. Duration of the test should not exceed one second.
4. This parameter is guaranteed but not tested.
5. V
OH
= V
CC
–0.6V at rated current.
6. The test limits for this parameter is
±
5µA at T
A
= –55°C.
2779 lnk 05
8.11
3
IDT54/74FCT3244/A
3.3V CMOS OCTAL BUFFER/LINE DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
Symbol
∆I
CC
I
CCD
Parameter
Quiescent Power Supply Current
Dynamic Power Supply
Current
(4)
V
CC
= Max.
Test Conditions
(1)
V
IN
= V
CC
– 0.6V
(3)
V
IN
= V
CC
V
IN
= GND
Min.
—
—
Typ.
(2)
2.0
60
Max.
30
85
Unit
µA
µA/
MHz
V
CC
= Max.
Outputs Open
50% Duty Cycle
x
OE
= GND
One Input Toggling
V
CC
= Max.
Outputs Open
fi = 10MHz
50% Duty Cycle
x
OE
= GND
One Bit Toggling
V
CC
= Max.
Outputs Open
fi = 2.5MHz
50% Duty Cycle
x
OE
= GND
Eight Bits Toggling
I
C
Total Power Supply Current
(6)
V
IN
= V
CC
V
IN
= GND
V
IN
= V
CC
–0.6V
V
IN
= GND
V
IN
= V
CC
V
IN
= GND
V
IN
= V
CC
–0.6V
V
IN
= GND
—
0.6
0.9
mA
—
0.6
0.9
—
1.2
1.7
(5)
—
1.2
1.8
(5)
NOTES:
1. For conditions shown as max. or min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 3.3V, +25°C ambient.
3. Per TTL driven input; all other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
∆I
CC
D
H
N
T
+ I
CCD
(f
CP
N
CP
/2 + fiNi)
I
CC
= Quiescent Current (I
CCL,
I
CCH
and I
CCZ
)
∆I
CC
= Power Supply Current for a TTL High Input
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
N
CP
= Number of Clock Inputs at f
CP
f
i
= Input Frequency
N
i
= Number of Inputs at fi
2779 tbl 06
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
(3)
FCT3244
Com'l.
Symbol
Parameter
Condition
(1)
Min.
(2)
Max.
Mil.
Min.
(2)
Max.
Com'l.
Min.
(2)
Max.
FCT3244A
Mil.
Min.
(2)
Max.
Unit
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
Propagation Delay
xAx to xYx
Output Enable Time
Output Disable Time
C
L
= 50pF
R
L
= 500Ω
1.5
1.5
1.5
6.5
8.0
7.0
1.5
1.5
1.5
7.0
8.5
7.5
1.5
1.5
1.5
4.8
6.2
5.6
1.5
1.5
1.5
5.1
6.5
5.9
ns
ns
ns
2779 tbl 07
NOTES:
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. Propagation Delays and Enable/Disable times are with V
CC
= 3.3V
±0.3V,
Normal Range. For V
CC
= 2.7V to 3.6V, Extended Range, all Propagation Delays
and Enable/Disable times should be degraded by 20%.
8.11
4
IDT54/74FCT3244/A
3.3V CMOS OCTAL BUFFER/LINE DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TEST CIRCUITS AND WAVEFORMS
TEST CIRCUITS FOR ALL OUTPUTS
6V
V
CC
SWITCH POSITION
Open
GND
500
Ω
V
Pulse
Generator
R
T
IN
V
D.U.T.
OUT
Test
Open Drain
Disable Low
Enable Low
Disable High
Enable High
All Other tests
Switch
6V
50pF
C
L
500
Ω
SET-UP, HOLD AND RELEASE TIMES
DATA
INPUT
TIMING
INPUT
ASYNCHRONOUS CONTROL
PRESET
CLEAR
ETC.
SYNCHRONOUS CONTROL
PRESET
CLEAR
CLOCK ENABLE
ETC.
t
SU
t
H
t
REM
t
SU
t
H
PROPAGATION DELAY
SAME PHASE
INPUT TRANSITION
t
PLH
OUTPUT
t
PLH
OPPOSITE PHASE
INPUT TRANSITION
t
PHL
t
PHL
3V
1.5V
0V
V
OH
1.5V
V
OL
3V
1.5V
0V
2779 drw 06
←
GND
Open
2779 lnk 08
DEFINITIONS:
C
L
= Load capacitance: includes jig and probe capacitance.
R
T
=
Termination resistance: should be equal to Z
OUT
of the Pulse
Generator.
2779 drw 03
PULSE WIDTH
3V
1.5V
0V
3V
1.5V
0V
3V
1.5V
0V
3V
1.5V
0V
2779 drw 04
LOW-HIGH-LOW
PULSE
t
W
HIGH-LOW-HIGH
PULSE
1.5V
1.5V
2779 drw 05
ENABLE AND DISABLE TIMES
ENABLE
CONTROL
INPUT
t
PZL
OUTPUT
NORMALLY SWITCH
6V
LOW
t
PZH
OUTPUT
NORMALLY
HIGH
SWITCH
GND
3V
1.5V
t
PHZ
0.3V
1.5V
0V
V
OH
0V
2779 drw 07
DISABLE
3V
1.5V
t
PLZ
0V
3V
0.3V
V
OL
NOTES:
1. Diagram shown for input Control Enable-LOW and input Control Disable-
HIGH.
2. Pulse Generator for All Pulses: Rate
≤
1.0MHz; t
F
≤
2.5ns; t
R
≤
2.5ns.
3. If V
CC
is below 3V, input voltage swings should be adjusted not to exceed
V
CC
.
8.11
5
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