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3SK224

Description
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size48KB,6 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

3SK224 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4

3SK224 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ConfigurationSINGLE
Maximum drain current (ID)0.025 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.025 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)15 dB
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK224
RF AMPLIFIER FOR UHF TV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
• Low Noise Figure:
• High Power Gain:
• Automatically Mounting:
• Small Package:
NF = 1.8 dB TYP. (f = 900 MHz)
G
PS
= 17 dB TYP. (f = 900 MHz)
PACKAGE DIMENSIONS
(Unit: mm)
0.4
–0.05
0.4
–0.05
+0.1
0.16
–0.06
+0.1
Embossed Type Taping
4 Pins Mini Mold
2.9±0.2
(1.8)
0.85 0.95
2
3
4
+0.1
• Suitable for use as RF amplifier in UHF TV tuner.
2.8
–0.1
+0.2
1.5
–0.1
+0.2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*1
R
L
10 kΩ
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
18
±8
(±10)
*1
±8
(±10)
*1
18
18
25
200
125
–55 to +125
V
V
V
V
mA
mW
°C
°C
0.6
–0.05
1
1.1
–0.1
0.8
+0.2
V
0 to 0.1
1.
2.
3.
4.
Source
Drain
Gate 2
Gate 1
Document No. P10576EJ2V0DS00 (2nd edition)
(Previous No. TD-2265)
Date Published August 1995 P
Printed in Japan
+0.1
0.4
–0.05
+0.1
(1.9)
©
1989
1993
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