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2SA1205

Description
SILICON PNP EPITAXIAL PLANAR
CategoryDiscrete semiconductor    The transistor   
File Size197KB,2 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Download Datasheet Parametric View All

2SA1205 Overview

SILICON PNP EPITAXIAL PLANAR

2SA1205 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)12 A
ConfigurationSingle
Minimum DC current gain (hFE)40
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)100 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)20 MHz
Base Number Matches1
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