Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126VAR, 3 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Parts packaging code | SIP |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 4 A |
| Collector-emitter maximum voltage | 60 V |
| Configuration | Single |
| Minimum DC current gain (hFE) | 25 |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of terminals | 3 |
| Maximum operating temperature | 140 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 40 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 2 MHz |
| Base Number Matches | 1 |

| 2N5194 | 2N5195 | MJE251 | |
|---|---|---|---|
| Description | Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126VAR, 3 PIN | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126VAR, 3 PIN | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126VAR, 3 PIN |
| Is it lead-free? | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Parts packaging code | SIP | SIP | SIP |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 | 3 | 3 |
| Reach Compliance Code | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 4 A | 4 A | 4 A |
| Collector-emitter maximum voltage | 60 V | 80 V | 80 V |
| Configuration | Single | Single | Single |
| Minimum DC current gain (hFE) | 25 | 20 | 40 |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609 code | e0 | e0 | e0 |
| Number of terminals | 3 | 3 | 3 |
| Maximum operating temperature | 140 °C | 140 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | PNP | PNP | PNP |
| Maximum power dissipation(Abs) | 40 W | 40 W | 1.5 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 2 MHz | 2 MHz | 40 MHz |
| Base Number Matches | 1 | 1 | - |
| Number of components | - | 1 | 1 |