BXY43P
HiRel Silicon PIN Diode
•
HiRel Discrete and Microwave Semiconductor
•
Current controlled RF resistors for RF
attenuators and switches
•
High reverse voltage
•
Hermetically sealed microwave package
•
esa
Space Qualified
ESA/SCC Detail Spec. No.: 5513/030
Type Variant No. 04
BXY43P-FP
1.2
1.1
1.2'
1.1'
2
Type
BXY43P
Maximum Ratings
Parameter
Package
FP
Configuration
parallel pair
Symbol
V
R
I
F
P
tot
T
j
T
op
T
sol
T
stg
Value
Marking
-
Unit
Reverse voltage
Forward current
Total power dissipation
1)
Junction temperature
Operating temperature range
Soldering temperature
2)
Storage temperature
150
400
500
150
-55 ... 150
235
-65 ... 175
V
mA
mW
°C
°C
°C
Thermal Resistance
Parameter
Thermal resistance junction-case
1
At
Symbol
R
th(j-c)
Value
100
Unit
K/W
T
S
= 40°C. For
T
S
> 40°C derating is required.
15 sec. maximum. The same terminal shall not be resoldered until 5 minutes have elapsed
2
During
1
2007-08-20
BXY43P
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
Reverse current 1
I
R1
-
-
100 nA
V
R1
= 150 V
Reverse current 2
V
R2
= 100 V
Forward voltage
I
F
= 100 mA
V
F
-
0.97
1
V
I
R2
-
-
10
AC Characteristics
Diode capacitance
V
R
= 50 V,
f
= 1 MHz
Forward resistance 1
I
F1
= 20 µA,
f
= 100 MHz
Forward resistance 2
I
F2
= 1 mA,
f
= 100 MHz
Forward resistance 3
Minority carrier lifetime
I
F
= 10 mA,
I
R
= 6 mA,
I
R
= 3 mA
Matching Requirements
Difference in Forward Resistance 2
1)
Difference in Forwars Resistance 3
1)
1
∆
R
C
T
R
F1
R
F2
R
F3
τ
L
0.4
-
-
-
250
0.6
55
2.2
0.9
650
0.85
70
3
1.5
-
pF
Ω
ns
R
F2
R
F3
-
-
-
-
15
15
%
F
[%]= 100*(RF_Diode2- RF_Diode1)/RF_Diode1
2
2007-08-20
BXY43P
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
4
2007-08-20
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