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1N914-GT3

Description
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size126KB,3 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric Compare View All

1N914-GT3 Overview

Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS PACKAGE-2

1N914-GT3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-LALF-W2
Reach Compliance Codeunknow
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum output current0.15 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.004 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
SENSITRON
SEMI CONDUCTOR
Data Sheet 2768, Rev. -

1N914 / DL914
FAST SWITCHING DIODE
Features
!
!
!
!
Fast Switching Speed
Glass Package Version for High Reliability
High Conductance
Available in Both Through-Hole and Surface
Mount Versions
A
B
A
A
B
C
D
C
DL914
Mechanical Data
1N914



!
Case: DO-35, MiniMELF
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: Cathode Band
!
Weight:
DO-35
0.13 grams
MiniMELF 0.05 grams
!
Marking: Cathode Band Only
Dim
A
B
C
D
Min
DO-35
Max
Min
MiniMELF
Max
Dim
A
B
C
MIn
3.30
1.30
0.28
Max
3.70
1.60
0.50
MIn
Max
0.130 0.146
0.051 0.063
0.011 0.020
In inch
25.40
4.00
0.60
2.00
in mm
1.000
0.157
0.024
0.079
In inch
In mm



Maximum Ratings
@T
A
=25°C unless otherwise specified

Characteristic

Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Rectified Current (Average), Half Wave Rectification with
Resistive Load and f
50MHz (Note 1)
Non-Repetitive Peak Forward Surge Current
@ t = 1.0s
@ t = 1.0µs
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
Value
100
Unit
V
75
V
53
300
150
1.0
2.0
500
1.68
300
-65 to +175
V
mA
mA
I
FSM
A
mW
mW/°C
K/W
°C
Power Dissipation (Note 1)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
P
d
R
θJA
T
j
, T
STG
221 West Industry Court
!
Deer Park, NY 11729-4681
!
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com

1N914-GT3 Related Products

1N914-GT3 1N914-T3 DL914-T1 DL914-GT1 DL914
Description Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS PACKAGE-2 Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS PACKAGE-2 Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, GLASS, MINIMELF-2 Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, GLASS, MINIMELF-2 Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, GLASS, MINIMELF-2
Is it Rohs certified? conform to incompatible incompatible conform to incompatible
package instruction O-LALF-W2 O-LALF-W2 O-LELF-R2 O-LELF-R2 O-LELF-R2
Reach Compliance Code unknow unknow unknown unknown compliant
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-LALF-W2 O-LALF-W2 O-LELF-R2 O-LELF-R2 O-LELF-R2
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum output current 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A
Package body material GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.5 W 0.5 W 0.5 W 0.5 W 0.5 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 75 V 75 V 75 V 75 V 75 V
Maximum reverse recovery time 0.004 µs 0.004 µs 0.004 µs 0.004 µs 0.004 µs
surface mount NO NO YES YES YES
Terminal form WIRE WIRE WRAP AROUND WRAP AROUND WRAP AROUND
Terminal location AXIAL AXIAL END END END
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Humidity sensitivity level 1 1 1 1 -
Base Number Matches 1 1 1 - -
Maker - - Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd.
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