AP4936M
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Simple Drive Requirement
D1
D2
D1
D2
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
G2
S2
25V
37mΩ
5.8A
▼
Fast Switching
SO-8
G1
S1
Description
D1
D2
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
25
±
20
5.8
4.6
30
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
20020305
AP4936M
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
25
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.03
-
-
-
6.5
-
-
-
6.9
1.2
4.5
6
17.5
14.5
5.5
218
155
63
Max. Units
-
-
37
60
3
-
1
25
±100
-
-
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=3.5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=25V, V
GS
=0V
V
DS
=20V ,V
GS
=0V
V
GS
=
±
20V
I
D
=5A
V
DS
=16V
V
GS
=5V
V
DS
=16V
I
D
=5A
R
G
=3.3Ω,V
GS
=10V
R
D
=3.2Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
I
S
V
SD
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.2V
T
j
=25℃, I
S
=1.7A, V
GS
=0V
Min.
-
-
Typ.
-
-
Max. Units
1.67
1.2
A
V
Forward On Voltage
2
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
AP4936M
30
25
T
C
=25
o
C
25
10V
8.0V
6.0V
I
D
, Drain Current (A)
T
C
=150
o
C
20
10V
8.0V
6.0V
5.0V
I
D
, Drain Current (A)
20
5.0V
15
15
10
10
V
GS
=4.0V
5
5
V
GS
=4.0V
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
1.8
55
I
D
=5.0A
T
C
=25
℃
1.6
I
D
=5A
V
GS
=10V
50
45
Normalized R
DS(ON)
3
4
5
6
7
8
9
10
11
1.4
R
DS(ON)
(m
Ω
)
40
1.2
35
1
30
0.8
25
20
0.6
-50
0
50
100
150
V
GS
(V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
AP4936M
7
2.5
6
2
5
I
D
, Drain Current (A)
1.5
4
3
P
D
(W)
1
0.5
0
25
50
75
100
125
150
0
50
100
150
2
1
0
T
c
, Case Temperature ( C)
o
T
c
, Case Temperature ( C)
o
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Duty Factor = 0.5
Normalized Thermal Response (R
thja
)
10
0.2
1ms
10ms
I
D
(A)
1
0.1
0.1
0.05
0.02
0.01
100ms
1s
0.1
P
DM
0.01
Single Pulse
t
T
T
C
=25
o
C
Single Pulse
0.01
0.1
1
10
10s
DC
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135
o
C/W
0.001
0.0001
100
0.001
0.01
0.1
1
10
100
1000
V
DS
(V)
t , Pulse Width (S)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP4936M
16
f=1.0MHz
1000
14
I
D
=5A
V
DS
=16V
V
GS
, Gate to Source Voltage (V)
12
Ciss
10
Coss
8
C (pF)
100
Crss
6
4
2
0
0
2
4
6
8
10
12
14
16
18
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
(V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
3
10
2
I
S
(A)
Tj=150
o
C
Tj=25
o
C
V
GS(th)
(V)
1
0
1.3
1.5
-50
1
0.1
0.1
0.3
0.5
0.7
0.9
1.1
0
50
100
150
V
SD
(V)
T
j
, Junction Temperature ( C )
o
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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