EEWORLDEEWORLDEEWORLD

Part Number

Search

3DA4793-BP

Description
Power Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size188KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric Compare View All

3DA4793-BP Overview

Power Bipolar Transistor,

3DA4793-BP Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompliant
ECCN codeEAR99
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736
Marilla
Street Chatsworth

  !"#
$ %    !"#
3DA4793
Features
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
o
o
Collector Power Dissipation P
CM
:2W(Ta=25
C);20W(T
C
=25
C)
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Halogen
free available upon request by adding suffix "-HF"
NPN
Silicon
Power Transistors
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
TO-220F
Rating
230
230
5.0
1.0
1.5
-55 to +150
-55 to +150
Min
230
230
5.0
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
T
A
=25
O
C
Junction Temperature
Storage Temperature
Parameter
Collector-Base Breakdown Voltage
(I
C
=0.1mAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=1mAdc, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector-Base Cutoff Current
(V
CB
=230Vdc,I
E
=0)
Emitter-Base Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
Forward Current Transfer ratio
(I
C
=100Adc, V
CE
=5.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Transition Frequency
(V
CE
=10Vdc, I
C
=100mAdc)
Unit
V
V
V
A
W
O
M
N
A
B
C
C
O
C
1
2
3
D
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Typ
---
---
---
Max
---
---
---
Units
Vdc
Vdc
Vdc
P
F
J
E
G
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
---
---
100
---
30
---
---
---
---
---
10
10
320
1.5
---
uAdc
uAdc
---
Vdc
MHz
DIM
A
B
C
D
E
F
G
H
J
M
N
P
Q
Q
H
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.392
.408
9.96
10.36
.138
3.50
.106
2.70
.583
.598
14.80
15.20
.520
13.20
.142
.158
3.60
4.00
.100
2.54
.020
.030
0.50
0.75
.043
.053
1.10
1.35
.169
.185
4.30
4.70
.110
.126
2.80
3.20
.098
.114
2.50
2.90
.020
.030
0.50
0.75
NOTE
Φ
www.mccsemi.com
Revision: A
1 of
2
2013/03/08

3DA4793-BP Related Products

3DA4793-BP 3DA4793-BP-HF
Description Power Bipolar Transistor, Power Bipolar Transistor,
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Base Number Matches 1 1

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 697  2009  706  299  669  15  41  7  14  33 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号