4400 Series is a 4,194,304 x 4-bit high-performance
CMOS Dynamic Random Access Memory. These
devices offer an accelerated cycle access called EDO
Page Mode. EDO Page Mode allows 2,048 or 4096
random accesses within a single row with access cycle
time as short as 20 ns per 4-bit word.
These features make the 4400 Series ideally suited for
high-bandwidth graphics, digital signal processing,
high-performance computing systems, and peripheral
applications.
The 4400 Series is packaged in a 24-pin 300-mil SOJ and
a 24-pin TSOP (Type II) with JEDEC standard pinouts.
•
Refresh Mode:
RAS-Only,
CAS-before-RAS
(CBR), and Hidden
•
Single power supply:
– 5V±10% or 3.3V ± 10%
•
Byte Write and Byte Read operation via two
CAS
•
Industrial temperature range -40°C to 85°C
PRODUCT SERIES OVERVIEW
Part No.
IS41C44002
IS41C44004
IS41LV44002
IS41LV44004
Refresh
2K
4K
2K
4K
Voltage
5V ± 10%
5V ± 10%
3.3V ± 10%
3.3V ± 10%
KEY TIMING PARAMETERS
Parameter
RAS
Access Time (t
RAC
)
CAS
Access Time (t
CAC
)
Column Address Access Time (t
AA
)
EDO Page Mode Cycle Time (t
PC
)
Read/Write Cycle Time (t
RC
)
-50
50
13
25
20
84
-60
60
15
30
25
104
Unit
ns
ns
ns
ns
ns
PIN CONFIGURATION
24 Pin SOJ, TSOP (Type II)
PIN DESCRIPTIONS
A0-A11
Address Inputs (4K Refresh)
Address Inputs (2K Refresh)
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Column Address Strobe
Power
Ground
No Connection
24
23
22
21
20
19
18
17
16
15
14
13
GND
I/O3
I/O2
CAS
OE
A9
A8
A7
A6
A5
A4
GND
VCC
I/O0
I/O1
WE
RAS
*A11(NC)
A10
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
A0-A10
I/O0-3
WE
OE
RAS
CAS
Vcc
GND
NC
* A11 is NC for 2K Refresh devices
.
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
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