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IGW08T120

Description
Low Loss IGBT in Trench and Fieldstop technology
File Size297KB,12 Pages
ManufacturerETC
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IGW08T120 Overview

Low Loss IGBT in Trench and Fieldstop technology

Preliminary
TrenchStoP Series
IGW08T120
C
Low Loss IGBT in Trench and Fieldstop technology
Approx. 1.0V reduced V
CE(sat)
compared to BUP305D
Short circuit withstand time – 10µs
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
G
E
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
V
CE
1200V
I
C
8A
V
CE(sat),Tj=25°C
1.7V
T
j,max
150°C
Symbol
V
CE
I
C
16
8
I
Cpul s
-
I
F
16
8
V
GE
1)
Type
IGW08T120
Package
TO-247AC
Ordering Code
Q67040-S4513
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
1200V,
T
j
150°C
Diode forward current
T
C
= 25°C
T
C
= 100°C
Gate-emitter voltage
Short circuit withstand time
Power dissipation
T
C
= 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
T
j
T
stg
-
-40...+150
-55...+150
260
°C
V
GE
= 15V,
V
CC
1200V,
T
j
150°C
P
tot
70
W
t
SC
Value
1200
Unit
V
A
24
24
±20
10
V
µs
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Preliminary / Rev. 1 Sep-03
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