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IRG4BH20K-S

Description
INSULATED GATE BIPOLAR TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size249KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRG4BH20K-S Overview

INSULATED GATE BIPOLAR TRANSISTOR

IRG4BH20K-S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompli
Other featuresLOW CONDUCTION LOSS
Shell connectionCOLLECTOR
Maximum collector current (IC)11 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE
Gate emitter threshold voltage maximum6.5 V
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)24 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)720 ns
Nominal on time (ton)51 ns
PD-95891A
IRG4BH20K-SPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control,
t
sc
=10µs @ V
CC
= 720V , T
J
= 125°C,
V
GE
= 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
• Industry standard D
2
Pak package
• Lead-Free
C
Short Circuit Rated
UltraFast IGBT
V
CES
= 1200V
G
E
V
CE(on) typ.
= 3.17V
@V
GE
= 15V, I
C
= 5.0A
n-channel
Benefits
• As a Freewheeling Diode we recommend our
HEXFRED
TM
ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBT's offer highest power
density motor controls possible
D
2
Pak
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
t
sc
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current

Clamped Inductive Load Current
‚
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
1200
11
5.0
22
22
10
±20
130
60
24
-55 to +150
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.24
–––
6 (0.21)
Max.
2.1
–––
40
–––
Units
°C/W
g (oz)
www.irf.com
1
01/21/2010

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Description INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3 Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3
Is it Rohs certified? incompatible incompatible conform to conform to incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code D2PAK D2PAK D2PAK D2PAK D2PAK
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3 3 3
Reach Compliance Code compli compliant compliant compliant compliant
Other features LOW CONDUCTION LOSS LOW CONDUCTION LOSS LOW CONDUCTION LOSS LOW CONDUCTION LOSS LOW CONDUCTION LOSS
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 11 A 11 A 11 A 11 A 11 A
Collector-emitter maximum voltage 1200 V 1200 V 1200 V 1200 V 1200 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Gate emitter threshold voltage maximum 6.5 V 6 V 6.5 V 6.5 V 6 V
Gate-emitter maximum voltage 20 V 20 V 20 V 20 V 20 V
JEDEC-95 code TO-263AB TO-263AB TO-263AB TO-263AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e0 e0 e3 e3 e0
Humidity sensitivity level 1 1 1 1 1
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 225 225 260 260 225
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 24 W 24 W 60 W 60 W 24 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 30 30 30 30
transistor applications MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal off time (toff) 720 ns 720 ns 720 ns 720 ns 720 ns
Nominal on time (ton) 51 ns 51 ns 51 ns 51 ns 51 ns
Maximum landing time (tf) - 400 ns 400 ns 400 ns 400 ns
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