FQPF7N80 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> FQPF7N80

FQPF7N80: Description3.8A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size1MB，9 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/; Environmental Compliance

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FQPF7N80 Overview

3.8A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN

FQPF7N80 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Rochester Electronics
Parts packaging code	TO-220F
package instruction	TO-220F, 3 PIN
Contacts	3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	580 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	800 V
Maximum drain current (ID)	3.8 A
Maximum drain-source on-resistance	1.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Humidity sensitivity level	NOT APPLICABLE
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT APPLICABLE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	15.2 A
Certification status	COMMERCIAL
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT APPLICABLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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