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IXFF24N100

Description
HiPerFETTM Power Mosfet in High Voltage ISOPLUS I4-PACTM
File Size112KB,4 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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HiPerFETTM Power Mosfet in High Voltage ISOPLUS I4-PACTM

IXFF 24N100
HiPerFET
TM
Power MOSFET
i
n High Voltage ISOPLUS i4-PAC
TM
5
1
2
I
D25
= 22 A
V
DSS
= 1000 V
Ω
R
DSon
= 390 mΩ
1
5
MOSFET
Symbol
V
DSS
V
GS
I
D25
I
D90
I
F25
I
F90
dv/dt
E
AR
Symbol
T
C
= 25°C
T
C
= 90°C
(diode) T
C
= 25°C
(diode) T
C
= 90°C
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
1000
±20
Features
• HiPerFET
TM
technology
- low R
DSon
- low gate charge for high frequency
operation
- unclamped inductive switching (UIS)
capability
- dv/dt ruggedness
- fast intrinsic reverse diode
• ISOPLUS i4-PAC
TM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
• switched mode power supplies
• DC-DC converters
• resonant converters
-o
120
75
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
t
rr
R
thJC
V
GS
= 10 V; I
D
= I
D90
h
a
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
390 mΩ
2.5
0.25
200
250
55
135
35
35
75
21
1.5
250
5
0.1
V
mA
mA
nA
nC
nC
nC
ns
ns
ns
ns
V
ns
0.32 K/W
V
DS
= 20 V; I
D
= 8 mA;
V
DS
= V
DSS
; V
GS
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
GS
= ±20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 500 V; I
D
= 12 A
V
GS
= 10 V; V
DS
= 500 V;
I
D
= 12 A; R
G
= 1
Ω
(diode) I
F
= 12 A; V
GS
= 0 V
(diode) I
F
= 24 A; -di/dt = 100 A/µs; V
DS
= 100 V
p
s
T
C
= 25°C
e
V
DS
< V
DSS
; I
F
100A;⎮di
F
/dt⎮≤ 100A/µs; R
G
= 2
Ω
T
VJ
= 150°C
u
V
22
15
A
A
A
A
5 V/ns
64
mJ
t
V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2006 IXYS All rights reserved
1-4
0623
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