MegaMOS
TM
FET
IXTH 35N30
IXTH 40N30
IXTM 40N30
N-Channel Enhancement Mode
V
DSS
300 V
300 V
300 V
I
D25
35 A
40 A
40 A
R
DS(on)
0.10
Ω
0.085
Ω
0.088
Ω
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
35N30
40N30
35N30
40N30
Maximum Ratings
300
300
±20
±30
35
40
140
160
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
°C
°C
°C
TO-247 AD (IXTH)
D (TAB)
TO-204 AE (IXTM)
D
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300
°C
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
l
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
300
2
4
±100
T
J
= 25°C
T
J
= 125°C
200
1
0.10
0.085
0.088
V
V
nA
µA
mA
Applications
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
l
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
l
l
IXTH35N30
IXTH40N30
IXTM40N30
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
Ω
Ω
Ω
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
l
l
l
l
l
l
l
l
91535E(5/96)
1-4
IXTH 35N30
IXTH 40N30
IXTM 40N30
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
22
25
4600
S
pF
pF
pF
30
90
100
90
220
50
105
0.42
0.25
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
TO-247 AD (IXTH) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 • I
D25
, pulse test
1
2
3
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
650
240
24
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
R
G
= 2
Ω,
(External)
40
75
40
190
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
28
85
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Test Conditions
V
GS
= 0 V
Repetitive;
pulse width limited by T
JM
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
35N30
40N30
35N30
40N30
35
40
140
160
1.5
400
A
A
A
A
V
ns
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185 .209
A
1
2.2
2.54
.087 .102
A
2
2.2
2.6
.059 .098
b
1.0
1.4
.040 .055
b
1
1.65
2.13
.065 .084
b
2
2.87
3.12
.113 .123
C
.4
.8
.016 .031
D 20.80 21.46
.819 .845
E
15.75 16.26
.610 .640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780 .800
L1
4.50
.177
∅
P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170 .216
S
6.15 BSC
242 BSC
TO-204AE (IXTM) Outline
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= I
S
, -di/dt = 100 A/µs, V
R
= 100 V
Pins
1 - Gate
2 - Source
Case - Drain
Dim.
A
A1
∅
b
∅
D
e
e1
Millimeter
Min.
Max.
6.4
11.4
1.53
3.42
1.45
1.60
22.22
10.67 11.17
5.21
5.71
Inches
Min. Max.
.250 .450
.060 .135
.057 .063
.875
.420 .440
.205 .225
.440
.151
.151
1.187
.495
.131
.655
.480
.165
.165
BSC
.525
.188
.675
L
11.18 12.19
∅
p 3.84
4.19
∅p
1 3.84
4.19
q
30.15 BSC
R 12.58 13.33
R1 3.33
4.77
s
16.64 17.14
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXTH 35N30
IXTH 40N30
IXTM 40N30
Fig. 1 Output Characteristics
80
70
T
J
= 25°C
V
GS
= 10V
8V
7V
Fig. 2 Input Admittance
80
70
60
60
I
D
- Amperes
I
D
- Amperes
50
6V
50
40
30
20
10
0
T
J
= 25°C
40
30
20
10
0
5V
0
2
4
6
8
10
12
14
0
1
2
3
4
5
6
7
8
9
10
V
DS
- Volts
V
GS
- Volts
Fig. 3 R
DS(on)
vs. Drain Current
2.0
T
J
= 25°C
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
1.8
R
DS(on)
- Normalized
R
DS(on)
- Normalized
1.6
1.4
V
GS
= 10V
2.00
1.75
1.50
1.25
1.00
0.75
I
D
= 20A
1.2
V
GS
= 15V
1.0
0.8
0.6
0
20
40
60
80
100
120
0.50
-50
-25
0
25
50
75
100 125 150
I
D
- Amperes
T
J
- Degrees C
Fig. 5 Drain Current vs.
Case Temperature
50
40
40N30
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
V
GS(th)
BV
DSS
1.1
BV/V
G(th)
- Normalized
50
75
100 125 150
I
D
- Amperes
1.0
0.9
0.8
0.7
0.6
30
20
10
0
-50
35N30
-25
0
25
0.5
-50
-25
0
25
50
75
100 125 150
T
C
- Degrees C
T
J
- Degrees C
© 2000 IXYS All rights reserved
3-4
IXTH 35N30
IXTH 40N30
IXTM 40N30
Fig.7 Gate Charge Characteristic Curve
10
V
DS
= 150V
Fig.8 Forward Bias Safe Operating Area
10µs
100
Limited by R
DS(on)
8
I
D
= 21A
I
G
= 10mA
6
4
2
0
0
25
50
75
100 125 150 175 200
I
D
- Amperes
100µs
V
GE
- Volts
10
1ms
10ms
100ms
1
1
10
100
300
Gate Charge - nCoulombs
V
DS
- Volts
Fig.9 Capacitance Curves
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
5
10
15
20
25
C
oss
C
rss
f = 1 MHz
V
DS
= 25V
C
iss
Fig.10 Source Current vs. Source
to Drain Voltage
80
70
60
Capacitance - pF
I
D
- Amperes
50
40
30
T
J
= 25°C
T
J
= 125°C
20
10
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Vds - Volts
V
SD
- Volts
Fig.11 Transient Thermal Impedance
1
Thermal Response - K/W
D=0.5
0.1
D=0.2
D=0.1
D=0.05
0.01
D=0.02
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
© 2000 IXYS All rights reserved
4-4
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