- 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory
V
DD
: 5.0 volts
+
10%
Standard Microcircuit Drawing 5962-96891
PRODUCT DESCRIPTION
The UT28F256 amorphous silicon anti-fuse PROM is a high
performance, asynchronous, radiation-hardened,
32K x 8 programmable memory device. The UT28F256 PROM
features fully asychronous operation requiring no external clocks
or timing strobes. An advanced radiation-hardened twin-well
CMOS process technology is used to implement the UT28F256.
The combination of radiation-hardness, fast access time, and low
power consumption make the UT28F256 ideal for high speed
systems designed for operation in radiation environments.
A(14:0)
DECODER
MEMORY
ARRAY
SENSE AMPLIFIER
CE
PE
OE
PROGRAMMING
CONTROL
LOGIC
DQ(7:0)
Figure 1. PROM Block Diagram
2
DEVICE OPERATION
The UT28F256 has three control inputs: Chip Enable (CE),
Program Enable (PE), and Output Enable (OE); fifteen address
inputs, A(14:0); and eight bidirectional data lines, DQ(7:0). CE
is the device enable input that controls chip selection, active, and
standby modes. Asserting CE causes I
DD
to rise to its active value
and decodes the fifteen address inputs to select one of 32,768
words in the memory. PE controls program and read operations.
During a read cycle, OE must be asserted to enable the outputs.
PIN CONFIGURATION
PIN NAMES
A(14:0)
CE
OE
PE
DQ(7:0)
Address
Chip Enable
Output Enable
Program Enable
Data Input/Data Output
Table 1. Device Operation Truth Table
1
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
DD
PE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
Notes:
1. “X” is defined as a “don’t care” condition.
2. Device active; outputs disabled.
OE
X
0
1
1
PE
1
1
0
1
CE
1
0
0
0
I/O MODE
Three-state
Data Out
Data In
Three-state
MODE
Standby
Read
Program
Read
2
ABSOLUTE MAXIMUM RATINGS
1
(Referenced to V
SS
)
SYMBOL
V
DD
V
I/O
T
STG
P
D
T
J
Θ
JC
I
I
PARAMETER
DC supply voltage
Voltage on any pin
Storage temperature
Maximum power dissipation
Maximum junction temperature
Thermal resistance, junction-to-case
2
DC input current
LIMITS
-0.3 to 7.0
-0.5 to (V
DD
+ 0.5)
-65 to +150
1.5
+175
3.3
UNITS
V
V
°C
W
°C
°C/W
mA
±
10
Notes:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
2. Test per MIL-STD-883, Method 1012, infinite heat sink.
3
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
T
C
V
IN
PARAMETER
Positive supply voltage
Case temperature range
DC input voltage
LIMITS
4.5 to 5.5
-55 to +125
0 to V
DD
UNITS
V
°C
V
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(V
DD
= 5.0V
±
10%; -55°C < T
C
< +125°C)
SYMBOL
V
IH
V
IL
V
OL1
V
OL2
V
OH1
V
OH2
C
IN 1
C
IO 1, 4
I
IN
I
OZ
PARAMETER
High-level input voltage
Low-level input voltage
Low-level output voltage
Low-level output voltage
High-level output voltage
High-level output voltage
Input capacitance
(TTL)
(TTL)
I
OL
= 4.0mA, V
DD
= 4.5V (TTL)
I
OL
= 200µA, V
DD
= 4.5V (CMOS)
I
OH
= -200µA, V
DD
= 4.5V (CMOS)
I
OH
= -2.0mA, V
DD
= 4.5V (TTL)
ƒ
= 1MHz, V
DD
= 5.0V
V
IN
= 0V
ƒ
= 1MHz, V
DD
= 5.0V
V
OUT
= 0V
V
IN
= 0V to V
DD
V
O
= 0V to V
DD
V
DD
= 5.5V
OE = 5.5V
V
DD
= 5.5V, V
O
= V
DD
V
DD
= 5.5V, V
O
= 0V
TTL inputs levels (I
OUT
= 0), V
IL
=
0.2V
V
DD
, PE = 5.5V
CMOS input levels V
IL
= V
SS
+0.25V
CE = V
DD
- 0.25 V
IH
= V
DD
- 0.25V
-5
-10
V
DD
-0.1
2.4
15
CONDITION
MINIMUM
2.4
0.8
0.4
V
SS
+ 0.10
MAXIMUM
UNIT
V
V
V
V
V
V
pF
Bidirectional I/O capacitance
15
pF
µA
µA
Input leakage current
Three-state output leakage
current
5
10
I
OS 2,3
I
DD1
(OP)
5
Short-circuit output current
90
-90
mA
mA
Supply current operating
@25.0MHz (40ns product)
@22.2MHz (45ns product)
Supply current standby
125
117
2
mA
mA
mA
I
DD2
(SB)
post-rad
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1E6 rad(Si).
1. Measured only for initial qualification, and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
4. Functional test.
5. Derates at 3.0mA/MHz.
4
READ CYCLE
A combination of PE greater than V
IH
(min), and CE less than
V
IL
(max) defines a read cycle. Read access time is measured
from the latter of device enable, output enable, or valid address
to valid data output.
An address access read is initiated by a change in address inputs
while the chip is enabled with OE asserted and PE deasserted.
Valid data appears on data output, DQ(7:0), after the specified
t
AVQV
is satisfied. Outputs remain active throughout the entire
cycle. As long as device enable and output enable are active, the
address inputs may change at a rate equal to the minimum read
cycle time.
AC CHARACTERISTICS READ CYCLE (Post-Radiation)*
(V
DD
= 5.0V
±
10%; -55°C < T
C
< +125°C)
SYMBOL
t
AVAV1
t
AVQV
t
AXQX2
t
GLQX2
t
GLQV
t
GHQZ
t
ELQX2
t
ELQV
t
EHQZ
PARAMETER
Read cycle time
Read access time
Output hold time
OE-controlled output enable time
OE-controlled access time
OE-controlled output three-state time
CE-controlled output enable time
CE-controlled access time
CE-controlled output three-state time
The chip enable-controlled access is initiated by CE going active
while OE remains asserted, PE remains deasserted, and the
addresses remain stable for the entire cycle. After the specified
t
ELQV
is satisfied, the eight-bit word addressed by A(14:0)
appears at the data outputs DQ(7:0).
Output enable-controlled access is initiated by OE going active
while CE is asserted, PE is deasserted, and the addresses are
stable. Read access time is t
GLQV
unless t
AVQV
or t
ELQV
have
not been satisfied.
28F256-45
MIN
MAX
45
45
0
0
15
15
0
45
15
28F256-40
MIN
MAX
40
40
0
0
15
15
0
40
15
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1E6 rads(Si).
1. Functional test.
2. Three-state is defined as a 400mV change from steady-state output voltage.
The importance of OTA was mentioned by many companies at the "Gas Industry NB-IoT Application Forum". Let's see how Ailabi can help. Background: On July 5, the "NB-IoT Application Professional Forum f...
My system needs to have PPPoE and VOIP functions. I use the wince5.0 system. I just put these two controls in when customizing. How can I set them up specifically? How can I prove that the function of...
2015 National College Student Electronic Design Competition Instruments and Main Components List [Undergraduate Group] 1. Instrument List 60MHz dual-channel digital oscilloscope 100MHz dual-channel di...
Use 16k*8-bit DRAM chips to form a 64k*32-bit memory, and draw a logical block diagram of the memory. [img]http://hi.eeworld.net/attachment/201006/26/4799579_1277519805xzy3.jpg[/img] [img]http://hi.ee...
Dual-mode inverters can operate both in conjunction with the grid and independently. These inverters can inject excess energy from renewable energy and storage devices into the grid, and withdraw p...[Details]
Nios II is a configurable 16-/32-bit RISC processor. Combined with a rich set of peripheral-specific instructions and hardware acceleration units, it provides a highly flexible and powerful SOPC sy...[Details]
Introduction to the principles of speech recognition technology
Automatic speech recognition (ASR) technology aims to enable computers to understand human speech and extract the textual inform...[Details]
summary
There are multiple approaches to making industrial systems more intelligent, including applying artificial intelligence (AI) technology at the edge and in the cloud to sensor...[Details]
On August 25th, TSMC, the world's leading contract chip manufacturer, attracted significant attention for its decision to build a chip manufacturing facility in Arizona. TSMC primarily manufactures...[Details]
On August 22nd, Lantu Motors unveiled a new technology called "Lanhai Intelligent Hybrid" during a live broadcast of CCTV News' "Top Laboratory." The name sounds like another new term, but a closer...[Details]
On August 18th, Galaxis, a specialist in integrated intelligent intralogistics robotics, officially unveiled its next-generation, ultra-narrow aisle forklift mobile robot, the "VFR Ultra-Narrow Ser...[Details]
In June 2014, the Ministry of Industry and Information Technology issued 4G FD-LTE licenses to China Unicom and China Telecom. Together with the 4G TD-LTE licenses issued to China Mobile, China Uni...[Details]
Electric vehicles are becoming increasingly popular, with increasingly longer ranges. There are two ways to charge electric vehicles: slow charging and fast charging. Which is the most suitable? Sl...[Details]
SMT placement machines are important equipment in surface mount technology (Surface Mount Technology). Their performance has a decisive impact on the quality and efficiency of electronic manufactur...[Details]
A half-bridge is an inverter topology for converting DC to AC. A typical half-bridge circuit consists of two controller switches, a three-wire DC power supply, two feedback diodes, and two capacito...[Details]
A human-machine interface (HMI) refers to the platform used by people to operate a PLC. This platform provides an interface between programs and humans, serving as a medium for information transmis...[Details]
Reflow soldering, as an electronics assembly process, has become a vital component of the electronics manufacturing industry. Choosing reflow soldering equipment is crucial for improving production...[Details]
Tools/Materials
Yitong Chuanglian MODBUS to PROFIBUS Gateway YT-PB-03
Siemens s7-300
This article describes how to configure the YT-PB-03 MODBUS to PROFIBUS gat...[Details]
We often hear about the precautions for using pure electric vehicles in winter, and many owners even develop relevant strategies, such as adopting a "charge as you go" principle for their vehicles,...[Details]
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
