5962-0622904QYC datasheet, PDF

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5962-0622904QYC: DescriptionStandard SRAM, 512KX32, 20ns, CMOS, CQFP68, 0.950 INCH, NCTB, CERAMIC, MQFP-68; Categorystorage storage; File Size370KB，18 Pages; ManufacturerDefense Logistics Agency

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5962-0622904QYC Overview

Standard SRAM, 512KX32, 20ns, CMOS, CQFP68, 0.950 INCH, NCTB, CERAMIC, MQFP-68

5962-0622904QYC Parametric

Parameter Name	Attribute value
Maker	Defense Logistics Agency
Parts packaging code	QFP
package instruction	QFF,
Contacts	68
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	20 ns
JESD-30 code	S-CQFP-F68
length	24.14 mm
memory density	16777216 bit
Memory IC Type	STANDARD SRAM
memory width	32
Number of functions	1
Number of terminals	68
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX32
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QFF
Package shape	SQUARE
Package form	FLATPACK
Parallel/Serial	PARALLEL
Certification status	Qualified
Maximum seat height	4.7 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	QUAD
width	24.14 mm
Base Number Matches	1

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Features

•

16 Mbit SRAM Multi Chip Module

Allows 32-, 16- or 8-bit access configuration

Operating Voltage: 3.3V

0.3V

Access Time

– 20 ns, 18 ns for AT68166F

Power Consumption

– Active: 620 mW per byte (Max) @ 18ns - 415 mW per byte (Max) @ 50ns

(1)

– Standby: 13 mW (Typ)

Military Temperature Range: -55 to +125°C

TTL-Compatible Inputs and Outputs

Asynchronous

Die manufactured on Atmel 0.25 µm Radiation Hardened Process

No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm

Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019

ESD Better than 4000V

Quality Grades:

– QML-Q or V with SMD 5962-06229

– ESCC

950 Mils Wide MQFP 68 Package

Mass : 8.5 grams

1. Only for AT68166F-18. 450mW for AT68166F-20.

Rad Hard

16 MegaBit 3.3V

SRAM Multi-

Chip Module

AT68166F

Note:

Description

The AT68166F is a 16Mbit SRAM packaged in a hermetic Multi Chip Module

(MCM) for space applications.

The AT68166F MCM incorporates four 4Mbit AT60142FT SRAM dice. It can be orga-

nized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of 512Kx8. It

combines rad-hard capabilities, a latch-up threshold of 80MeV.cm²/mg, a Multiple Bit

Upset immunity and a total dose tolerance of 300Krads, with a fast access time.

The MCM packaging technology allows a reduction of the PCB area by 50% with a

weight savings of 75% compared to four 4Mbit packages.

Thanks to the small size of the 4Mbit SRAM die, Atmel has been able to accommo-

date the assembly of the four dice on one side of the package which facilitates the

power dissipation.

The compatibility with other products allows designers to easily migrate to the Atmel

AT68166F memory.

The AT68166F is powered at 3.3V.

The AT68166F is processed according to the test methods of the latest revision of the

MIL-PRF-38535 or the ESCC 9000.

7747B–AERO–04/09

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