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IDT71256L100TDB

Description
32KX8 STANDARD SRAM, 25ns, CDIP28
Categorystorage   
File Size478KB,10 Pages
ManufacturerIDT (Integrated Device Technology, Inc.)
Websitehttp://www.idt.com/
Download Datasheet Parametric View All

IDT71256L100TDB Overview

32KX8 STANDARD SRAM, 25ns, CDIP28

IDT71256L100TDB Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals28
Maximum operating temperature125 Cel
Minimum operating temperature-55 Cel
Maximum supply/operating voltage5.5 V
Minimum supply/operating voltage4.5 V
Rated supply voltage5 V
maximum access time25 ns
Processing package description0.600 INCH, CERAMIC, DIP-28
stateACTIVE
CraftsmanshipCMOS
packaging shapeRECTANGULAR
Package SizeIN-LINE
Terminal formTHROUGH-HOLE
Terminal spacing2.54 mm
terminal coatingTIN LEAD
Terminal locationDUAL
Packaging MaterialsCERAMIC, GLASS-SEALED
Temperature levelMILITARY
memory width8
organize32K X 8
storage density262144 deg
operating modeASYNCHRONOUS
Number of digits32768 words
Number of digits32K
Memory IC typeSTANDARD SRAM
serial parallelPARALLEL
CMOS Static RAM
256K (32K x 8-Bit)
Features
High-speed address/chip select time
– Military: 25/35/45/55/70/85/100ns (max.)
– Industrial: 25/35ns (max.)
– Commercial: 20/25/35ns (max.) low power only
Low-power operation
Battery Backup operation – 2V data retention
Produced with advanced high-performance CMOS
technology
Input and output directly TTL-compatible
Available in standard 28-pin (300 or 600 mil) ceramic DIP,
28-pin (600 mil) plastic DIP, 28-pin (300 mil) SOJ and
32-pin LCC
Military product compliant to MIL-STD-883, Class B
IDT71256S
IDT71256L
Description
The IDT 71256 is a 262,144-bit high-speed static RAM organized as
32K x 8. It is fabricated using IDT's high-performance, high-reliability
CMOS technology.
Address access times as fast as 20ns are available with power
consumption of only 350mW (typ.). The circuit also offers a reduced power
standby mode. When
CS
goes HIGH, the circuit will automatically go to and
remain in, a low-power standby mode as long as
CS
remains HIGH. In
the full standby mode, the low-power device consumes less than 15µW,
typically. This capability provides significant system level power and
cooling savings. The low-power (L) version also offers a battery backup
data retention capability where the circuit typically consumes only 5µW
when operating off a 2V battery.
The IDT71256 is packaged in a 28-pin (300 or 600 mil) ceramic DIP,
a 28-pin 300 mil SOJ, a 28-pin (600 mil) plastic DIP, and a 32-pin LCC
providing high board level packing densities.
The IDT71256 military RAM is manufactured in compliance with the
latest revision of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance and
reliability.
Functional Block Diagram
A
0
ADDRESS
DECODER
A
14
262,144 BIT
MEMORY ARRAY
V
CC
GND
I/O
0
INPUT
DATA
CIRCUIT
I/O
7
I/O CONTROL
CS
OE
WE
,
CONTROL
CIRCUIT
2946 drw 01
FEBRUARY 2001
1
©2000 Integrated Device Technology, Inc.
DSC-2946/9
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