Transistor
2SD1011
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
5.0±0.2
4.0±0.2
q
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
Ratings
100
100
15
50
20
300
150
–55 ~ +150
Unit
V
V
1 2 3
0.45
–0.1
1.27
+0.2
13.5±0.5
High foward current transfer ratio h
FE
.
Low collector to emitter saturation voltage V
CE(sat)
.
High emitter to base voltage V
EBO
.
5.1±0.2
s
Features
0.45
–0.1
1.27
+0.2
2.3±0.2
V
mA
mA
mW
˚C
˚C
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
NV
Conditions
V
CB
= 60V, I
E
= 0
V
CE
= 60V, I
B
= 0
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= –2mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100kΩ, Function = FLAT
100
100
15
400
0.05
200
80
1200
0.2
V
MHz
mV
min
typ
max
100
1
Unit
nA
µA
V
V
V
*
h
FE
Rank classification
R
400 ~ 800
S
600 ~ 1200
h
FE
Rank
1
Transistor
P
C
— Ta
500
80
Ta=25˚C
70
400
50
25˚C
Ta=75˚C
40
–25˚C
2SD1011
I
C
— V
CE
60
V
CE
=10V
I
C
— V
BE
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
60
50
40
300
I
B
=100µA
80µA
60µA
50µA
40µA
30µA
Collector current I
C
(mA)
30
200
30
20µA
20
10µA
10
20
100
10
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
30
10
3
1
0.3
25˚C
0.1
–25˚C
0.03
0.01
0.1
Ta=75˚C
I
C
/I
B
=10
2000
h
FE
— I
C
200
V
CE
=10V
f
T
— I
E
V
CB
=10V
Ta=25˚C
Forward current transfer ratio h
FE
1600
Transition frequency f
T
(MHz)
10
30
100
Ta=75˚C
160
1200
25˚C
120
–25˚C
800
80
400
40
0.3
1
3
10
30
100
0
0.1
0.3
1
3
0
– 0.1 – 0.3
–1
–3
–10
–30
–100
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
— V
CB
6
NV — I
C
I
E
=0
f=1MHz
Ta=25˚C
100
V
CE
=10V
G
V
=80dB
Function=FLAT
Ta=25˚C
R
g
=100kΩ
100
NV — V
CE
Collector output capacitance C
ob
(pF)
5
R
g
=100kΩ
Noise voltage NV (mV)
4
60
22kΩ
40
5kΩ
Noise voltage NV (mV)
80
80
60
22kΩ
3
40
2
5kΩ
1
20
20
0
1
3
10
30
100
0
0.01
0
0.03
0.1
0.3
1
1
3
10
I
C
=1mA
G
V
=80dB
Function=FLAT
Ta=25˚C
30
100
Collector to base voltage V
CB
(V)
Collector current I
C
(mA)
Collector to emitter voltage V
CE
(V)
2
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