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933771180113

Description
1A, 50V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size26KB,5 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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933771180113 Overview

1A, 50V, SILICON, SIGNAL DIODE

933771180113 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D119
1N4001ID to 1N4007ID
Rectifiers
Product specification
Supersedes data of April 1992
1996 Jun 10

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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