B0202GA-02-1962-F datasheet, PDF

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B0202GA-02-1962-F: DescriptionFixed Resistor, Thin Film, 0.25W, 19600ohm, 100V, 1% +/-Tol, 50ppm/Cel, Surface Mount, 0202, CHIP; CategoryPassive components The resistor; File Size381KB，3 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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B0202GA-02-1962-F Overview

Fixed Resistor, Thin Film, 0.25W, 19600ohm, 100V, 1% +/-Tol, 50ppm/Cel, Surface Mount, 0202, CHIP

B0202GA-02-1962-F Parametric

Parameter Name	Attribute value
Objectid	1579386381
package instruction	, 0202
Reach Compliance Code	compliant
ECCN code	EAR99
Installation features	SURFACE MOUNT
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package shape	RECTANGULAR PACKAGE
method of packing	TRAY
Rated power dissipation(P)	0.25 W
Rated temperature	70 °C
resistance	19600 Ω
Resistor type	FIXED RESISTOR
size code	0202
surface mount	YES
technology	THIN FILM
Temperature Coefficient	50 ppm/°C
Terminal shape	ONE SURFACE
Tolerance	1%
Operating Voltage	100 V

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Wire Bondable

Chip Resistors

WBC Series

•

Discrete or tapped schematics

•

MIL inspection available

•

High resistor density

IRC’s WBC series wire bondable chip resistors are ideally suited for

the most demanding hybrid application. The WBC combines IRC’s

TaNSil

tantalum nitride thin film technology with silicon substrate processing to produce an extremely small

footprint device with the proven stability, reliability and moisture performance of IRC’s TaNSil

resistor film.

Available in a wide range of tolerances and temperature coefficients to fit a variety of hybrid circuit applica-

tions. Custom resistance values, sizes and schematics are available on request from the factory.

Physical Data

R0202 - Discrete

(0.508mm ±0.025)

0.020˝ ±0.001

Electrical Data

Absolute Tolerance

Absolute TCR

Package Power Rating

(@ 70°C)

Rated Operating Voltage

√

(not to exceed P x R )

Operating Temperature

Back contact

Noise

Top contact

pad chamfered

0.004˝ min bond pad size

to ±0.1%

to ±25ppm/°C

250mW

100V

-55°C to +150°C

<-30dB

Oxidized Silicon

(10KÅ SiO

min)

0.010˝ ±0.001

(0.254mm ±0.025)

10KÅ minimum

15KÅ minimum

Silicon

(Al / Au optional)

3KÅ Au minimum

10KÅ Al minimum

Silicon Dioxide or

Silicon Nitride

0.004˝ min bond pad size

0.020˝ ±0.001

(0.508mm ±0.025)

B0202 - Discrete back contact

(0.508mm ±0.025)

0.020˝ ±0.001

Substrate Material

Top contact

Substrate Thickness

Aluminum

Gold

R0202 and

T0303

B0202

0.020˝ ±0.001

(0.508mm ±0.025)

T0303 - Tapped network ½R + ½R

Bond Pad

Metallization

(0.762mm ±0.025)

0.030˝ ±0.001

½R

Backside

0.030˝ ±0.001

(0.762mm ±0.025)

0.004˝ min bond pad size

Passivation

General Note

IRC reserves the right to make changes in product specification without notice or liability.

All information is subject to IRC’s own data and is considered accurate at time of going to print.

• Corpus Christi Texas 78411 USA

Telephone: 361 992 7900 • Facsimile: 361 992 3377 • Website: www.irctt.com

A subsidiary of

TT electronics plc

WBC Series Issue January 2009 Sheet 1 of 3

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