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BYV28-150T/R

Description
DIODE 1.9 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size107KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BYV28-150T/R Overview

DIODE 1.9 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode

BYV28-150T/R Parametric

Parameter NameAttribute value
MakerNXP
package instructionE-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeE-LALF-W2
Maximum non-repetitive peak forward current90 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current1.9 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage150 V
Maximum reverse current1 µA
Maximum reverse recovery time0.025 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BYV28 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 Oct 02
1997 Nov 24
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