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IDT71V632S6PF8

Description
64K X 32 CACHE SRAM, 5 ns, PQFP100
Categorystorage   
File Size754KB,18 Pages
ManufacturerIDT (Integrated Device Technology, Inc.)
Websitehttp://www.idt.com/
Download Datasheet Parametric View All

IDT71V632S6PF8 Overview

64K X 32 CACHE SRAM, 5 ns, PQFP100

IDT71V632S6PF8 Parametric

Parameter NameAttribute value
maximum clock frequency100 MHz
Number of functions1
Number of terminals100
Minimum operating temperature0.0 Cel
Maximum operating temperature70 Cel
Rated supply voltage3.3 V
Minimum supply/operating voltage3.14 V
Maximum supply/operating voltage3.63 V
Processing package description14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
each_compliYes
EU RoHS regulationsYes
stateActive
sub_categorySRAMs
ccess_time_max5 ns
i_o_typeCOMMON
jesd_30_codeR-PQFP-G100
jesd_609_codee3
storage density2.10E6 bi
Memory IC typeCACHE SRAM
memory width32
moisture_sensitivity_level3
Number of ports1
Number of digits65536 words
Number of digits64K
operating modeSYNCHRONOUS
organize64KX32
Output characteristics3-STATE
Output enableYES
Packaging MaterialsPLASTIC/EPOXY
ckage_codeLQFP
ckage_equivalence_codeQFP100,.63X.87
packaging shapeRECTANGULAR
Package SizeFLATPACK, LOW PROFILE
serial parallelPARALLEL
eak_reflow_temperature__cel_260
wer_supplies__v_3.3
qualification_statusCOMMERCIAL
seated_height_max1.6 mm
standby_current_max0.0150 Am
standby_voltage_mi3.14 V
Maximum supply voltage0.2000 Am
surface mountYES
CraftsmanshipCMOS
Temperature levelCOMMERCIAL
terminal coatingMATTE TIN
Terminal formGULL WING
Terminal spacing0.6500 mm
Terminal locationQUAD
ime_peak_reflow_temperature_max__s_30
length20 mm
width14 mm
dditional_featureALSO REQUIRES 3.3V I/O SUPPLY
64K x 32
3.3V Synchronous SRAM
Pipelined Outputs
Burst Counter, Single Cycle Deselect
Features
IDT71V632
64K x 32 memory configuration
Supports high system speed:
Commercial:
– A4 4.5ns clock access time (117 MHz)
Commercial and Industrial:
– 5 5ns clock access time (100 MHz)
– 6 6ns clock access time (83 MHz)
– 7 7ns clock access time (66 MHz)
Single-cycle deselect functionality (Compatible with
Micron Part # MT58LC64K32D7LG-XX)
LBO
input selects interleaved or linear burst mode
Self-timed write cycle with global write control (GW), byte
write enable (BWE), and byte writes (BWx)
Power down controlled by ZZ input
Operates with a single 3.3V power supply (+10/-5%)
Packaged in a JEDEC Standard 100-pin rectangular plastic
thin quad flatpack (TQFP)
Green parts available, see ordering information
Description
Pin Description Summary
A
0
–A
15
CE
CS
0
,
CS
1
OE
GW
BWE
BW
1,
BW
2,
BW
3,
BW
4
CLK
ADV
ADSC
ADSP
LBO
ZZ
I/O
0
–I/O
31
V
DD
, V
DDQ
V
SS
, V
SSQ
Ad d re ss Inp uts
Chip Enab le
Chip s Se le cts
Outp ut Enab le
Glo b al Write Enab le
Byte Write Enab le
Ind ivid ual Byte Write Se le cts
Clo ck
Burst Ad d re ss Ad vance
Ad d re ss Status (Cache Co ntro lle r)
Ad d re ss Status (Pro ce sso r)
Line ar / Inte rle ave d Burst Ord e r
S le e p Mo d e
Data Inp ut/Outp ut
3.3V
Array Gro und , I/O Gro und
The IDT71V632 is a 3.3V high-speed SRAM organized as 64K x 32
with full support of the Pentium™ and PowerPC™ processor interfaces.
The pipelined burst architecture provides cost-effective 3-1-1-1 second-
ary cache performance for processors up to 117MHz.
The IDT71V632 SRAM contains write, data, address, and control
registers. Internal logic allows the SRAM to generate a self-timed write
based upon a decision which can be left until the extreme end of the write
cycle.
The burst mode feature offers the highest level of performance to the
system designer, as the IDT71V632 can provide four cycles of data for
a single address presented to the SRAM. An internal burst address counter
accepts the first cycle address from the processor, initiating the access
sequence. The first cycle of output data will be pipelined for one cycle before
it is available on the next rising clock edge. If burst mode operation is
selected (ADV=LOW), the subsequent three cycles of output data will be
available to the user on the next three rising clock edges. The order of these
three addresses will be defined by the internal burst counter and the
LBO
input pin.
The IDT71V632 SRAM utilizes IDT's high-performance, high-volume
3.3V CMOS process, and is packaged in a JEDEC Standard 14mm x
20mm 100-pin thin plastic quad flatpack (TQFP) for optimum board density
in both desktop and notebook applications.
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
I/O
Po we r
Po we r
Synchro no us
Synchro no us
Synchro no us
Asynchro no us
Synchro no us
Synchro no us
Synchro no us
N/A
Synchro no us
Synchro no us
Synchro no us
DC
Asynchro no us
Synchro no us
N/A
N/A
3619 tb l 01
Pentium processor is a trademark of Intel Corp.
PowerPC is a trademark of International Business Machines, Inc.
FEBRUARY 2017
1
DSC-3619/09
©2017 Integrated Device Technology, Inc.
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