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EDI8M8512LP35C6I

Description
SRAM Module, 512KX8, 35ns, CMOS,
Categorystorage    storage   
File Size568KB,8 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet Parametric View All

EDI8M8512LP35C6I Overview

SRAM Module, 512KX8, 35ns, CMOS,

EDI8M8512LP35C6I Parametric

Parameter NameAttribute value
MakerEDI [Electronic devices inc.]
Reach Compliance Codeunknown
Maximum access time35 ns
JESD-30 codeR-XDMA-T32
memory density4194304 bit
Memory IC TypeSRAM MODULE
memory width8
Number of functions1
Number of ports1
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX8
Output characteristics3-STATE
ExportableYES
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Base Number Matches1
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