S18C2B1M datasheet, PDF - EEWORLD Datasheet

S18C2B1M: DescriptionSilicon Controlled Rectifier, 110000mA I(T), 200V V(DRM); CategoryAnalog mixed-signal IC Trigger device; File Size432KB，6 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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S18C2B1M Overview

Silicon Controlled Rectifier, 110000mA I(T), 200V V(DRM)

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99
Nominal circuit commutation break time	50 µs
Critical rise rate of minimum off-state voltage	500 V/us
Maximum DC gate trigger current	150 mA
Maximum DC gate trigger voltage	2.5 V
Maximum holding current	500 mA
Maximum leakage current	20 mA
On-state non-repetitive peak current	3200 A
Maximum on-state current	110000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	200 V
surface mount	NO
Trigger device type	SCR
Base Number Matches	1

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