3SK127-Y datasheet, PDF - EEWORLD Datasheet

3SK127-Y: DescriptionTRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, 2-3J1A, 4 PIN, FET RF Small Signal; CategoryDiscrete semiconductor The transistor; File Size3MB，5 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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3SK127-Y Overview

TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, 2-3J1A, 4 PIN, FET RF Small Signal

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	15 V
Maximum drain current (ID)	0.03 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.03 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, DEPLETION MODE
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

	3SK127-Y	3SK127-O
Description	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, 2-3J1A, 4 PIN, FET RF Small Signal	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, 2-3J1A, 4 PIN, FET RF Small Signal
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Contacts	4	4
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	15 V	15 V
Maximum drain current (ID)	0.03 A	0.03 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.03 pF	0.03 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	4	4
Operating mode	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE
Maximum operating temperature	125 °C	125 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240	240
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	TIN LEAD	TIN LEAD
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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