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BAV199F-E6433

Description
Rectifier Diode, 85V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size540KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BAV199F-E6433 Overview

Rectifier Diode, 85V V(RRM),

BAV199F-E6433 Parametric

Parameter NameAttribute value
MakerInfineon
Reach Compliance Codecompliant
ECCN codeEAR99
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
Maximum non-repetitive peak forward current4.5 A
Maximum operating temperature150 °C
Maximum repetitive peak reverse voltage85 V
Maximum reverse recovery time1.5 µs
surface mountYES
Base Number Matches1
BAV199...
Silicon Low Leakage Diode
Low-leakage applications
Medium speed switching times
Series pair configuration
BAV199
BAV199F
3
D 1
D 2
1
2
Type
BAV199
BAV199F*
* Preliminary
Package
SOT23
TSFP-3
Configuration
series
series
Marking
JYs
JYs
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
V
R
V
RM
I
F
I
FSM
Value
Unit
Diode reverse voltage
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t
= 1 µs
t
=1s
80
85
200
4.5
0.5
V
mA
A
Total power dissipation
BAV199,
T
S
31°C
BAV199F,
T
S
tbd
Junction temperature
Storage temperature
P
tot
mW
330
250
T
j
T
stg
150
-65 ... 150
°C
1
Mar-10-2004

BAV199F-E6433 Related Products

BAV199F-E6433 BAV199F-E6327
Description Rectifier Diode, 85V V(RRM), Rectifier Diode, 85V V(RRM),
Maker Infineon Infineon
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.9 V 0.9 V
Maximum non-repetitive peak forward current 4.5 A 4.5 A
Maximum operating temperature 150 °C 150 °C
Maximum repetitive peak reverse voltage 85 V 85 V
Maximum reverse recovery time 1.5 µs 1.5 µs
surface mount YES YES
Base Number Matches 1 1
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