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FX6UMJ-3

Description
Power Field-Effect Transistor, 6A I(D), 150V, 0.59ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size50KB,4 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

FX6UMJ-3 Overview

Power Field-Effect Transistor, 6A I(D), 150V, 0.59ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FX6UMJ-3 Parametric

Parameter NameAttribute value
MakerMitsubishi
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage150 V
Maximum drain current (Abs) (ID)6 A
Maximum drain current (ID)6 A
Maximum drain-source on-resistance0.59 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)45 W
Maximum pulsed drain current (IDM)24 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PR
ion. hange.
icat
ecif ect to c
p
al s subj
a fin
e
not mits ar
is
i
This etric l
m
ice:
Not e para
om
S
IMI
EL
ARY
N
MITSUBISHI Pch POWER MOSFET
FX6UMJ-3
HIGH-SPEED SWITCHING USE
FX6UMJ-3
OUTLINE DRAWING
10.5 max
4
Dimensions in mm
4.5
1.3
3.2
16
12.5 min
3.8 max
1.0
7.0
φ
3.6
0.8
D
0.5
4.5 max
2.54
2.54
2.6
1
2
3
3
4V DRIVE
V
DSS
............................................................. –150V
r
DS (ON) (MAX)
................................................ 0.53Ω
I
D
...................................................................... –6A
Integrated Fast Recovery Diode (TYP.) .........100ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
1
1
2
3
4
2 4
GATE
DRAIN
SOURCE
DRAIN
TO-220
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
–150
±20
–6
–24
–6
–6
–24
45
–55 ~ +150
–55 ~ +150
2.0
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999
Avalanche drain current (Pulsed) L = 100µH
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Typical value
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