HGTD8P50G1S9A datasheet, PDF - EEWORLD Datasheet

HGTD8P50G1S9A: DescriptionInsulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, P-Channel, TO-252AA; CategoryDiscrete semiconductor The transistor; File Size218KB，6 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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HGTD8P50G1S9A Overview

Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, P-Channel, TO-252AA

Parameter Name	Attribute value
Maker	Harris
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	12 A
Collector-emitter maximum voltage	500 V
Configuration	SINGLE
Maximum landing time (tf)	2500 ns
Gate emitter threshold voltage maximum	6 V
Gate-emitter maximum voltage	20 V
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	66 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Maximum off time (toff)	680 ns
Nominal off time (toff)	480 ns
Nominal on time (ton)	45 ns
VCEsat-Max	3.7 V
Base Number Matches	1

	HGTD8P50G1S9A
Description	Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, P-Channel, TO-252AA
Maker	Harris
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	12 A
Collector-emitter maximum voltage	500 V
Configuration	SINGLE
Maximum landing time (tf)	2500 ns
Gate emitter threshold voltage maximum	6 V
Gate-emitter maximum voltage	20 V
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	66 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Maximum off time (toff)	680 ns
Nominal off time (toff)	480 ns
Nominal on time (ton)	45 ns
VCEsat-Max	3.7 V
Base Number Matches	1

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