EFMB101 datasheet, PDF - EEWORLD Datasheet

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EFMB101: DescriptionRectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AA, DO-214AA, 2 PIN; CategoryDiscrete semiconductor diode; File Size55KB，2 Pages; ManufacturerRectron Semiconductor; Websitehttp://www.rectron.com/; Environmental Compliance

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EFMB101 Overview

Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AA, DO-214AA, 2 PIN

EFMB101 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Rectron Semiconductor
Parts packaging code	DO-214AA
package instruction	DO-214AA, 2 PIN
Contacts	2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	METALLURGICALLY BONDED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	265
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	50 V
Maximum reverse recovery time	0.035 µs
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

EFMB101

THRU

EFMB106

SURFACE MOUNT GLASS PASSIVATED

SUPER FAST SILICON RECTIFIER

VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere

FEATURES

*

Glass passivated device

Ideal for surface mounted applications

Low leakage current

Metallurgically bonded construction

Mounting position: Any

Weight: 0.09 gram

DO-214AA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

o

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS

(At T

A

= 25

o

C unless otherwise noted)

RATINGS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Volts

Maximum DC Blocking Voltage

Maximum Average Forward Current

o

at T

A

= 55 C

Peak Forward Surge Current I

FM

(surge): 8.3 ms single half

sine-wave superimposed on rated load (JEDEC method)

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range

SYMBOL

V

RRM

V

RMS

V

DC

I

O

I

FSM

C

J

T

J

, T

STG

15

-65 to + 175

EFMB101 EFMB102 EFMB103 EFMB104 EFMB105 EFMB106

50

35

50

100

70

100

150

105

150

1.0

30

10

200

140

200

300

210

300

400

280

400

UNITS

Volts

Amps

pF

0

C

ELECTRICAL CHARACTERISTICS

(At T

A

= 25 C unless otherwise noted)

CHARACTERISTICS

Maximum Forward Voltage at 1.0A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Maximum Reverse Recovery Time (Note 1)

NOTES : 1. Test Conditions: I

F

=0.5A, I

R

=1.0A, I

RR

=0.25A.

2. Measured at 1 MH

Z

and applied reverse voltage of 4.0 volts.

@T

A

= 25 C

@T

A

=150 C

trr

o

SYMBOL

V

F

I

R

EFMB101 EFMB102 EFMB103 EFMB104 EFMB105 EFMB106

0.95

1.25

5.0

UNITS

Volts

uAmps

50

35

nSec

1998-8

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