FLL410IK-3C datasheet, PDF - EEWORLD Datasheet

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FLL410IK-3C: DescriptionRF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED PACKAGE-2; CategoryDiscrete semiconductor The transistor; File Size1MB，6 Pages; ManufacturerSUMITOMO; Websitehttps://global-sei.com/; Environmental Compliance

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FLL410IK-3C Overview

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED PACKAGE-2

FLL410IK-3C Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SUMITOMO
package instruction	FLANGE MOUNT, R-CDFM-F2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	12 V
Maximum drain current (ID)	7.6 A
FET technology	JUNCTION
highest frequency band	L BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Operating mode	DEPLETION MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE
Base Number Matches	1

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FLL410IK-3C

L-Band High Power GaAs FET

FEATURES

・High

Output Power: Pout=46.0dBm(Typ.)

・High

Gain: GL=13.0dB(Typ.)

・High

PAE:

ηadd=52%(Typ.)

・Broad

Band: 2.5~2.7GHz

・Hermetically

Sealed Package

DESCRIPTION

The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is

designed for use in 2.5 – 2.7 GHz band amplifiers. This new product

is uniquely suited for use in MMDS applications as it offers excellent

linearity, high efficiency, high gain, long term reliability and ease of use.

Eudyna

stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25

Item

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Symbol

stg

Rating

-5

100

-65 to +175

175

Unit

RECOMMENNDED OPERATING CONDITION(Case Temperature Tc=25

Item

DC Input Voltage

Gate Current

Operating Channel Temperature

Symbol

Tch

Ω

Condition

Limit

≤12

≤88

≥-25

≤145

Unit

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25

Item

Drain Current

Pinch-off Voltage

Gate-Source Breakdown Voltage

Symbol

DSS

GSO

OUT

dsr

add

Test Conditions

=5V, V

=0V

=5V, I

=110mA

=-1.1mA

=12V

f=2.6 GHz

=3A

Pin=35.0dBm

Channel to Case

Min.

-0.1

-5.0

45.0

12.0

Limit

Typ.

4.0

-0.3

46.0

13.0

5.9

1.3

Max.

-0.5

7.6

1.5

Unit

dBm

Output Power

Linear Gain　*1

Drain Current

Power-added Efficiency

Thermal Resistance

C/W

*１：GL is measured at Pin=22.0dBm

ESD

Class

Ⅲ

2000V　~

CASE STYLE: IK

Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k

Ω

)

Edition 1.1

Oct 2003

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