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2SA0879

Description
For general amplification Complementary to 2SC1573
CategoryDiscrete semiconductor    The transistor   
File Size80KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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2SA0879 Overview

For general amplification Complementary to 2SC1573

2SA0879 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.07 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER BISMUTH COPPER
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
Transistors
2SA0879
(2SA879)
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC1573
Features
High collector-emitter voltage (Base open) V
CEO
0.7
+0.3
–0.2
0.7
±0.1
5.9
±0.2
4.9
±0.2
Unit: mm
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−250
−200
−5
−70
−100
1
150
−55
to
+150
Unit
V
V
V
mA
mA
W
°C
°C
1 2 3
0.45
+0.2
–0.1
(1.27)
13.5
±0.5
0.45
+0.2
–0.1
(1.27)
8.6
±0.2
2.54
±0.15
1 : Emitter
2 : Collector
3 : Base
EIAJ : SC-51
TO-92L-A1 Package
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= −100 µA,
I
B
=
0
I
E
= −1 µA,
I
C
=
0
V
CE
= −10
V, I
C
= −5
mA
I
C
= −50
mA, I
B
= −5
mA
V
CB
= −10
V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
−10
V, I
E
= 0, f = 1 MHz
50
80
5
10
Min
−200
−5
60
220
−1.5
Typ
Max
Unit
V
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
60 to 150
R
100 to 220
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002
SJC00006BED
(3.2)
1

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