RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FFM301
THRU
FFM307
SURFACE MOUNT GLASS PASSIVATED
FAST RECOVERY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes
FEATURES
*
*
*
*
*
*
Glass passivated device
Ideal for surface mounted applications
Low leakage current
Metallurgically bonded construction
Mounting position: Any
Weight: 0.24 gram
DO-214AB
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
0.125 (3.17)
0.115 (2.92)
0.280 (7.11)
0.260 (6.60)
0.245 (6.22)
0.220 (5.59)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.320 (8.13)
0.305 (7.75)
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
o
Maximum Average Forward Rectified Current at T
A
= 55 C
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
(Note 2) Rθ
JL
(Note 3) Rθ
JA
C
J
T
J
, T
STG
FFM301 FFM302 FFM303 FFM304 FFM305 FFM306 FFM307 UNITS
50
35
50
100
70
100
200
140
200
400
280
400
3.0
200
15
50
60
-55 to + 150
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
0
0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Thermal Resistance
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage at 3.0A DC
o
Maximum Full Load Reverse Current,Full cycle Average at T
A
= 55 C
Maximum DC Reverse Current at
@T
A
= 25
o
C
o
Rated DC Blocking Voltage
@T
A
= 125 C
Maximum Reverse Recovery Time (Note 4)
C/ W
C/ W
pF
0
C
SYMBOL
V
F
I
R
trr
FFM301 FFM302 FFM303 FFM304 FFM305 FFM306 FFM307 UNITS
1.3
50
10
300
150
250
500
Volts
uAmps
uAmps
uAmps
nSec
2002-11
NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC
2. Thermal resistance junction to terminal 6.0mm
2
copper pads to each terminal.
3. Thermal resistance junction to ambient, 6.0mm
2
copper pads to each terminal.
4. Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A
RATING AND CHARACTERISTIC CURVES ( FFM301 THRU FFM307 )
AVERAGE FORWARD CURRENT, (A)
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
PEAK FORWARD SURGE
CURRENT, (A)
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
200
100
5
4
3
2
1
0
0
25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( )
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
50
30
20
10
1
5
10
50
NUMBER OF CYCLES AT 60Hz
100
8.3ms Single Half Sine-Wave
(JEDED Method)
INSTANTANEOUS FORWARD CURRENT, (A)
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
20
10
3.0
1.0
0.3
0.1
.03
.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
TJ = 25¢J
Pulse Width=300uS
1% Duty Cycle
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0 2
4
10
20
REVERSE VOLTAGE, ( V )
40
100
TJ = 25
FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(-)
(+)
25 Vdc
(approx)
(-)
D.U.T
0
PULSE
GENERATOR
(NOTE 2)
-0.25A
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
-1.0A
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
1cm
SET TIME BASE FOR
50/100 ns/cm
RECTRON
MCU
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