BZW04P10B datasheet, PDF - EEWORLD Datasheet

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BZW04P10B: DescriptionTrans Voltage Suppressor Diode, 10V V(RWM), Bidirectional,; CategoryDiscrete semiconductor diode; File Size49KB，4 Pages; ManufacturerEIC [EIC discrete Semiconductors]; Environmental Compliance

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BZW04P10B Overview

Trans Voltage Suppressor Diode, 10V V(RWM), Bidirectional,

BZW04P10B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	EIC [EIC discrete Semiconductors]
Reach Compliance Code	compliant
ECCN code	EAR99
Breakdown voltage nominal value	12 V
Maximum clamping voltage	16.7 V
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
polarity	BIDIRECTIONAL
Maximum repetitive peak reverse voltage	10 V
surface mount	NO
Base Number Matches	1

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BZW04 SERIES

: 6.8 - 440 Volts

: 400 Watts

FEATURES :

* 400W surge capability at 1ms

* Excellent clamping capability

* Low zener impedance

* Fast response time : typically less

then 1.0 ps from 0 volt to V

BR(min)

* Typical I

less then 1µA above 10V

TRANSIENT VOLTAGE

SUPPRESSOR

DO - 41

1.00 (25.4)

MIN.

0.107 (2.74)

0.080 (2.03)

0.205 (5.20)

0.160 (4.10)

MECHANICAL DATA

* Case : DO-41 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

method 208 guaranteed

* Polarity : Color band denotes cathode end except Bipolar.

* Mounting position : Any

* Weight : 0.339 gram

0.034 (0.86)

0.028 (0.71)

1.00 (25.4)

MIN.

Dimensions in inches and (millimeters)

DEVICES FOR BIPOLAR APPLICATIONS

For bi-directional use B Suffix.

Electrical characteristics apply in both directions

MAXIMUM RATINGS

Rating at 25

C ambient temperature unless otherwise specified.

Rating

Peak Power Dissipation at Ta = 25

C, Tp=1ms

(Note1)

Steady State Power Dissipation at T

= 75

Lead Lengths 0.375", (9.5mm)

(Note 2)

Peak Forward Surge Current, 8.3ms Single Half

Sine-Wave Superimposed on Rated Load

(JEDEC Method)

(Note 3)

Operating and Storage Temperature Range

Note :

Symbol

Value

Minimum 400

Unit

Watts

1.0

Watt

FSM

STG

- 65 to + 175

Amps.

(1 ) Non-repetitive Current pulse, per Fig. 5 and derated above Ta = 25

C per Fig. 1

(2) Mounted on Copper Leaf area of 1.57 in

(40mm

(3) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minutes maximum.

UPDATE : MAY 18, 1998

BZW04P10B Related Products

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Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum clamping voltage	16.7 V	54 V	152 V	165 V	179 V	384 V	41.5 V	125 V	137 V
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
polarity	BIDIRECTIONAL	BIDIRECTIONAL	BIDIRECTIONAL	BIDIRECTIONAL	BIDIRECTIONAL	BIDIRECTIONAL	BIDIRECTIONAL	BIDIRECTIONAL	BIDIRECTIONAL
Maximum repetitive peak reverse voltage	10 V	33 V	94 V	102 V	111 V	239 V	26 V	78 V	86 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Maker	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	-	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]
Breakdown voltage nominal value	12 V	39 V	110 V	120 V	-	280 V	30 V	91 V	100 V
Base Number Matches	1	1	1	1	1	1	1	-	-

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