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FKPF3N80

Description
Bi-Directional Triode Thyristor Planar Silicon
CategoryAnalog mixed-signal IC    Trigger device   
File Size142KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

FKPF3N80 Overview

Bi-Directional Triode Thyristor Planar Silicon

FKPF3N80 Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Shell connectionISOLATED
ConfigurationSINGLE
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current3 A
Off-state repetitive peak voltage800 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device typeTRIAC
FKPF3N80
FKPF3N80
Application Explanation
Switching mode power supply, light dimmer, electric flasher unit
TV sets, stereo, refrigerator, washing machine, bread maker
Electric blanket, solenoid driver, small motor control
Photo copier, electric tool
2
1: T
1
2: T
2
3: Gate
3
1 2 3
TO-220F
1
Bi-Directional Triode Thyristor Planar Silicon
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
DRM
Parameter
Repetitive Peak Off-State Voltage
(Note1 )
Rating
800
Units
V
Symbol
I
T (RMS)
I
TSM
I
2
t
di/dt
P
GM
P
G (AV)
V
GM
I
GM
T
J
T
STG
V
iso
Parameter
RMS On-State Current
Surge On-State Current
I
2
t for Fusing
Critical Rate of Rise of On-State Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature
Isolation Voltage
Conditions
Commercial frequency, sine full wave 360°
conduction, T
C
=110°C
Sinewave 1 full cycle, peak value,
non-repetitive
50Hz
60Hz
Rating
3
30
33
4.5
50
5
0.5
10
2
- 40 ~ 125
- 40 ~ 125
Units
A
A
A
A
2
s
A/µs
W
W
V
A
°C
°C
V
Value corresponding to 1 cycle of halfwave,
surge on-state current, tp=10ms
I
G
= 2x I
GT
, tr
100ns
Ta=25°C, AC 1 minute, T
1
T
2
G terminal to
case
1500
Thermal Characteristic
Symbol
R
th(J-C)
Parameter
Thermal Resistance
Test Condition
Junction to case
(Note 4)
Min.
-
Typ.
-
Max.
4.3
Units
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
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