EMF32 / UMF32N
Transistors
Power management (dual transistors)
EMF32 / UMF32N
DTA143T and 2SK3019 are housed independently in a EMT6 package.
Application
Power management circuit
External dimensions
(Unit : mm)
Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Structure
Silicon epitaxial planar transistor
ROHM : EMT6
Each lead has
same dimensions
Abbreviated symbol : F32
Equivalent circuits
(4)
(3)
0.65
(3)
(2)
(1)
0.5
0.5 0.5
1.0
1.6
0.65
0.7
0.9
1.25
2.1
0.15
(4)
(5)
(6)
(1)
Tr2
(6)
Tr1
1pin mark
0.1Min.
Packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
ROHM : UMT6
UMF32
UMT6
F32
TR
3000
EMF32
EMT6
F32
T2R
8000
Each lead has
same dimensions
Abbreviated symbol : F32
2.0
0.2
(5)
1.3
(2)
1/4
EMF32 / UMF32N
Transistors
Absolute maximum ratings
(Ta=25°C)
Tr1
Parameter
Symbol
Limits
V
CBO
−50
Collector-base voltage
V
CEO
−50
Collector-emitter voltage
−5
V
EBO
Emitter-base voltage
I
C
−100
Collector current
P
C
150(TOTAL)
Power dissipation
Tj
150
Junction temperature
Tstg
−55
to
+150
Range of storage temperature
Unit
V
V
V
mA
mW
°C
°C
∗1
∗1
120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Tr2
Symbol
Limits
Parameter
V
DSS
30
Drain-source voltage
V
GSS
±20
Gate-source voltage
I
D
100
Continuous
Drain current
200
I
DP
Pulsed
I
DR
100
Continuous
Reverse drain
current
I
DRP
200
Pulsed
Total power dissipation
150(TOTAL)
P
D
Tch
150
Channel temperature
Tstg
−55
to
+150
Range of storage temperature
Unit
V
V
mA
mA
mA
mA
mW
°C
°C
∗1
∗1
∗2
∗1
PW≤10ms Duty cycle≤50%
∗2
120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Electrical characteristics
(Ta=25°C)
Tr1
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
Min.
−50
−50
−5
−
−
−
100
3.29
−
Typ.
−
−
−
−
−
−
250
4.7
250
Max.
−
−
−
−0.5
−0.5
−0.3
600
6.11
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
I
C
= −50µA
I
C
= −1mA
I
E
= −50µA
V
CB
= −50V
V
EB
= −4V
I
C
/I
B
= −5mA/ −0.25mA
I
C
= −1mA,
V
CE
= −5V
−
V
CE
= −10V,
I
E
=5mA,
f=100MHz
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗
Transition frequency of the device
∗
Tr2
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage
Static drain-source
on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
|Y
fs
|
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Min.
−
30
−
0.8
−
−
20
−
−
−
−
−
−
−
Typ.
−
−
−
−
5
7
−
13
9
4
15
35
80
80
Max.
±1
−
1.0
1.5
8
13
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
Ω
Ω
ms
pF
pF
pF
ns
ns
ns
ns
Conditions
V
GS
=±20V,
V
DS
=0V
I
D
=10µA,
V
GS
=0V
V
DS
=30V,
V
GS
=0V
V
DS
=3V,
I
D
=100µA
I
D
=10mA,
V
GS
=4V
I
D
=1mA,
V
GS
=2.5V
V
DS
=3V,
I
D
=10mA
V
DS
=5V,
V
GS
=0V,
f=1MHz
I
D
=10mA,
V
DD
5V,
V
GS
=5V,
R
L
=500Ω,
R
GS
=10Ω
2/4
EMF32 / UMF32N
Transistors
Electrical characteristic curves
Tr1
1k
500
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
V
CE
=−5V
−1
−500m
−200m
−100m
−50m
−20m
−10m
−5m
−2m
Ta=100°C
25°C
−40°C
l
C
/l
B
=20
DC CURRENT GAIN : h
FE
200
100
50
20
10
5
2
1
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
Ta=100°C
25°C
−40°C
−1m
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain vs. collector
current
Fig.2 Collector-emitter saturation
voltage vs. collector current
Tr2
GATE THRESHOLD VOLTAGE : V
GS(th)
(V)
0.15
4V
3V
200m
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
3.5V
Ta=25°C
Pulsed
100m
50m
20m
V
DS
=3V
Pulsed
2
V
DS
=3V
I
D
=0.1mA
Pulsed
1.5
0.1
10m
5m
2m
Ta=125°C
75°C
25°C
−25°C
2.5V
1
0.05
2V
V
GS
=1.5V
1m
0.5m
0.5
0.2m
0
0
1
2
3
4
5
0.1m
0
1
2
3
4
0
−50
−25
0
25
50
75
100
125 150
DRAIN-SOURCE VOLTAGE : V
DS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Typical output characteristics
Fig.4 Typical transfer characteristics
Fig.5 Gate threshold voltage vs.
channel temperature
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
20
10
5
Ta=125°C
75°C
25°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
20
10
5
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
V
GS
=4V
Pulsed
50
Ta=125°C
75°C
25°C
−25°C
V
GS
=2.5V
Pulsed
15
Ta=25°C
Pulsed
10
2
1
2
1
0.5
0.001
0.002
5
I
D
=0.1A
I
D
=0.05A
0.5
0.001
0.002
0.005 0.01 0.02
0.05 0.1
0.2
0.5
0.005 0.01 0.02
0.05
0.1
0.2
0.5
0
0
5
10
15
20
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.6
Static drain-source on-state
resistance vs. drain current (
Ι
)
Fig.7
Static drain-source on-state
resistance vs. drain current (
ΙΙ
)
Fig.8
Static drain-source on-state
resistance vs. gate-source
voltage
3/4
EMF32 / UMF32N
Transistors
9
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
REVERSE DRAIN CURRENT : I
DR
(A)
8
7
6
5
4
3
2
1
0
−50 −25
0
25
50
75
I
D
=100mA
V
GS
=4V
Pulsed
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
0.5
V
DS
=3V
Pulsed
200m
0.2
0.1
0.05
Ta=−25°C
25°C
75°C
125°C
100m
50m
V
GS
=0V
Pulsed
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
I
D
=50mA
0.02
0.01
0.005
0.002
Ta=125°C
75°C
25°C
−25°C
100 125
150
0.001
0.0001
0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05
0.1 0.2
0.5
0
0.5
1
1.5
CHANNEL TEMPERATURE : Tch (°C)
DRAIN CURRENT : I
D
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.9
Static drain-source on-state
resistance vs. channel temperature
Fig.10 Forward transfer admittance vs.
drain current
Fig.11 Reverse drain current vs.
source-drain voltage (
Ι
)
REVERSE DRAIN CURRENT : I
DR
(A)
200m
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
Ta=25°C
Pulsed
50
20
CAPACITANCE : C (pF)
Ta
=25°C
f=1MH
Z
V
GS
=0V
SWITHING TIME : t (ns)
1000
t
f
500
t
d(off)
200
100
50
t
r
t
d(on)
Ta
=25°C
V
DD
=5V
V
GS
=5V
R
G
=10Ω
Pulsed
10
5
C
iss
V
GS
=4V
0V
C
oss
C
rss
20
10
5
2
1
0.5
0.1
0
0.5
1
1.5
0.2
0.5
1
2
5
10
20
50
2
0.1
0.2
0.5
1
2
5
10
20
50
100
SOURCE-DRAIN VOLTAGE : V
SD
(V)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(mA)
Fig.12 Reverse drain current vs.
source-drain voltage (
ΙΙ
)
Fig.13 Typical capacitance vs.
drain-source voltage
Fig.14 Switching characteristics
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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