IS733H
A.C. INPUT PHOTOTRANSISTOR
OPTICALLY COUPLED
ISOLATORS
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 approval pending
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EN60950 approval pending
DESCRIPTION
The IS733H optically coupled isolator consists
of two infrared light emitting diodes connected
in inverse parallel and NPN silicon photo
transistor in a standard 6 pin dual in line plastic
package.
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Peak forward current
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Collector-base Voltage BV
CBO
Emitter-collector Voltage BV
ECO
Emitter-base Voltage BV
EBO
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
320mW
(derate linearly 4.27mW/°C above 25°C)
35V
35V
6V
6V
160mW
±150mA
±1A
230mW
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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AC or polarity insensitive input
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Telephone sets, Telephone exchangers
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Signal transmission between systems of
different potentials and impedances
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
9/6/97
ISOCOM INC
720 E., Park Boulevard, Suite 104,
Plano, TX 75074 USA
Tel: (972) 423-5521
Fax: (972) 422-4549
DB92067-AAS/A1
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Collector-emitter Breakdown (BV
CEO
)
(
note
2 )
Collector-base Breakdown (BV
CBO
)
Emitter-base Breakdown (BV
EBO
)
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (CTR) (note 2 )
35
35
6
6
100
15
300
MIN TYP MAX UNITS
1.2
1.4
V
TEST CONDITION
I
F
= ±20mA
I
C
= 1mA
I
C
= 100µA
I
E
= 100µA
I
E
= 100µA
V
CE
= 20V
±1mAI
F
, 5V V
CE
Output
V
V
V
V
nA
%
Coupled
Collector-emitter Saturation VoltageV
CE(SAT)
0.2
V
±20mAI
F
, 1mAI
C
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
Output Rise Time
Output Fall Time
tr
tf
5300
7500
5x10
10
V
RMS
V
PK
Ω
µs
µs
See note 1
See note 1
V
IO
= 500V (note 1)
V
CE
= 2V ,
I
C
= 2mA, R
L
= 100Ω
4
3
18
18
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
9/6/97
DB92067-AAS/A2
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Collector-emitter saturation voltage V
CE(SAT)
(V)
6
5
4
3
2
1
0
0
Collector-emitter Saturation
Voltage vs. Forward Current
=1mA
2mA
3mA
5mA
8mA
150
100
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
Ic
T
A
= 25°C
5
10
15
Forward current I
F
(±mA)
Collector Current vs. Collector-emitter Voltage
50
T
A
= 25°C
±50
±30
±20
±15
20
10
0
±10
I
F
= ±5mA
Forward current I
F
(±mA)
50
Collector current I
C
(mA)
-30
0
25
50
75
100
125
40
30
40
30
20
10
0
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.14
I
F
= ±20mA
I
C
= 1mA
Current transfer ratio CTR (%)
0.12
0.10
0.08
0.06
0.04
0.02
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Current Transfer Ratio vs. Forward Current
320
280
240
200
160
120
80
40
0
1
2
5
10
20
50
Forward current I
F
(±mA)
DB92067-AAS/A2
Collector-emitter saturation voltage V
CE(SAT)
(V)
V
CE
= 5V
T
A
= 25°C
9/6/97
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