HFM307-W datasheet, PDF - EEWORLD Datasheet

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HFM307-W: DescriptionRectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2; CategoryDiscrete semiconductor diode; File Size31KB，3 Pages; ManufacturerRectron Semiconductor; Websitehttp://www.rectron.com/; Environmental Compliance

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HFM307-W Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2

HFM307-W Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	DO-214AB
package instruction	R-PDSO-C2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW LEAKAGE CURRENT
application	EFFICIENCY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.7 V
JEDEC-95 code	DO-214AB
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	265
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	800 V
Maximum reverse current	0.3 µA
Maximum reverse recovery time	0.075 µs
Reverse test voltage	800 V
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

HFM301

THRU

HFM308

SURFACE MOUNT GLASS PASSIVATED

HIGH EFFICIENCY SILICON RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes

FEATURES

Glass passivated device

Ideal for surface mounted applications

Low leakage current

Metallurgically bonded construction

Mounting position: Any

Weight: 0.24 gram

DO-214AB

DATA MECHANICAL

* Epoxy : Device has UL flammability classification 94V-0

0.125 (3.17)

0.115 (2.92)

0.280 (7.11)

0.260 (6.60)

0.245 (6.22)

0.220 (5.59)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

0.103 (2.62)

0.079 (2.06)

0.060 (1.52)

0.030 (0.76)

0.320 (8.13)

0.305 (7.75)

0.012 (0.305)

0.006 (0.152)

0.008 (0.203)

0.004 (0.102)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS

(At T

= 25

C unless otherwise noted)

RATINGS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Volts

Maximum DC Blocking Voltage

Maximum Average Forward Current

at T

= 50 C

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range

SYMBOL

RRM

RMS

FSM

, T

STG

200

-55 to + 150

HFM301 HFM302 HFM303 HFM304 HFM305 HFM306 HFM307 HFM308

100

200

140

200

300

210

300

400

280

400

3.0

150

600

420

600

800

560

800

1000

700

1000

UNITS

Volts

Amps

ELECTRICAL CHARACTERISTICS

(At T

= 25 C unless otherwise noted)

CHARACTERISTICS

Maximum Forward Voltage at 3.0A DC

Maximum Full Load Reverse Current, Full cycle Average T

= 55 C

Maximum DC Reverse Current at

= 25 C

Rated DC Blocking Voltage

= 125

Maximum Reverse Recovery Time (Note 1)

NOTES : 1. Test Conditions: I

=0.5A, I

=-1.0A, I

=-0.25A.

2. Measured at 1 MH

and applied reverse voltage of 4.0 volts.

SYMBOL

trr

HFM301 HFM302 HFM303 HFM304 HFM305 HFM306 HFM307 HFM308

1.0

1.3

150

1.7

UNITS

Volts

uAmps

nSec

2002-10

HFM307-W Related Products

	HFM307-W	HFM306-W	HFM305-W	HFM303-W	HFM308-W	HFM308-T	HFM302-W	HFM304-W
Description	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2	Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2	Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2	Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2	Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	DO-214AB	DO-214AB	DO-214AB	DO-214AB	DO-214AB	DO-214AB	DO-214AB	DO-214AB
package instruction	R-PDSO-C2	SMC, 2 PIN	SMC, 2 PIN	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	SMC, 2 PIN
Contacts	2	2	2	2	2	2	2	2
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT
application	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.7 V	1.7 V	1.3 V	1 V	1.7 V	1.7 V	1 V	1.3 V
JEDEC-95 code	DO-214AB	DO-214AB	DO-214AB	DO-214AB	DO-214AB	DO-214AB	DO-214AB	DO-214AB
JESD-30 code	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
JESD-609 code	e3	e3	e3	e3	e3	e3	e3	e3
Maximum non-repetitive peak forward current	150 A	150 A	200 A	200 A	150 A	150 A	200 A	200 A
Number of components	1	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	265	265	265	265	265	265	265	265
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	800 V	600 V	400 V	200 V	1000 V	1000 V	100 V	300 V
Maximum reverse current	0.3 µA	0.3 µA	0.3 µA	0.3 µA	0.3 µA	0.3 µA	0.3 µA	0.3 µA
Maximum reverse recovery time	0.075 µs	0.075 µs	0.05 µs	0.05 µs	0.075 µs	0.075 µs	0.05 µs	0.05 µs
Reverse test voltage	800 V	600 V	400 V	200 V	1000 V	1000 V	100 V	300 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	1	1	1	1	1	1

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